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2-Mbit (64K x 36) Pipelined Sync SRAM

CY7C1346H

Cypress Semiconductor Corporation

198 Champion Court

San Jose

,

CA 95134-1709

408-943-2600

Document #: 38-05672 Rev. *B

 Revised April 26, 2006

Features

• Registered inputs and outputs for pipelined operation

• 64K × 36 common I/O architecture 

• 3.3V core power supply

• 3.3V/2.5V I/O operation

• Fast clock-to-output times 

— 3.5 ns (166-MHz device)

• Provide high-performance 3-1-1-1 access rate

• User-selectable burst counter supporting Intel

®

 

Pentium

®

 interleaved or linear burst sequences

• Separate processor and controller address strobes

• Synchronous self-timed writes

• Asynchronous output enable

• Offered in JEDEC-standard lead-free 100-pin TQFP 

package

• “ZZ” Sleep Mode Option

Functional Description

[1]

The CY7C1346H SRAM integrates 64K x 36 SRAM cells with
advanced synchronous peripheral circuitry and a two-bit
counter for internal burst operation. All synchronous inputs are
gated by registers controlled by a positive-edge-triggered
Clock Input (CLK). The synchronous inputs include all
addresses, all data inputs, address-pipelining Chip Enable
(CE

1

), depth-expansion Chip Enables (CE

2

 and

 

CE

3

), Burst

Control inputs (ADSC,  ADSP,  and  ADV), Write Enables

(BW

[A:D]

, and BWE), and Global Write (GW). Asynchronous

inputs include the Output Enable (OE) and the ZZ pin.
Addresses and chip enables are registered at rising edge of
clock when either Address Strobe Processor (ADSP) or

Address Strobe Controller (ADSC) are active. Subsequent
burst addresses can be internally generated as controlled by
the Advance pin (ADV).
Address, data inputs, and write controls are registered on-chip
to initiate a self-timed Write cycle.This part supports Byte Write
operations (see Pin Descriptions and Truth Table for further
details). Write cycles can be one to four bytes wide as
controlled by the Byte Write control inputs.  GW when active
LOW causes all bytes to be written. 

The CY7C1346H operates from a +3.3V core power supply
while all outputs also operate with either a +3.3V/2.5V supply.
All inputs and outputs are JEDEC-standard
JESD8-5-compatible.

Note: 

1. For best-practices recommendations, please refer to the Cypress application note 

System Design Guidelines 

on www.cypress.com.

Logic Block Diagram

ADDRESS
REGISTER

ADV

CLK

BURST

COUNTER 

AND

LOGIC

CLR

Q1

Q0

ADSP

ADSC

MODE

BWE

GW

CE

1

CE

2

CE

3

OE

ENABLE

REGISTER

OUTPUT

REGISTERS

SENSE
AMPS

OUTPUT

BUFFERS

E

PIPELINED

ENABLE

INPUT

REGISTERS

A0, A1, A

BW

B

BW

C

BW

D

BW

A

MEMORY

ARRAY

SLEEP

CONTROL

ZZ

A

[1:0]

2

DQ

A

 ,DQP

A

BYTE 

WRITE REGISTER

DQ

B,

DQP

B

  

BYTE 

WRITE REGISTER

DQ

C

,DQP

C

 

BYTE 

WRITE REGISTER

DQ

D,

DQ

D

 

BYTE 

WRITE REGISTER

DQ

A,

DQP

A

BYTE 

WRITE DRIVER

DQ

B,

DQP

B

  

BYTE 

WRITE DRIVER

DQ

C

 ,DQP

C

 

BYTE 

WRITE DRIVER

DQ

D

 ,DQP

D

BYTE 

WRITE DRIVER

                 

DQP

A

DQP

B

DQP

C

DQP

D

DQs

[+] Feedback 

Summary of Contents for CY7C1346H

Page 1: ...le OE and the ZZ pin Addresses and chip enables are registered at rising edge of clock when either Address Strobe Processor ADSP or Address Strobe Controller ADSC are active Subsequent burst addresses...

Page 2: ...QA DQPA DQPc DQc DQC VDDQ VSSQ DQC DQC DQC DQC VSSQ VDDQ DQC DQC NC VDD NC VSS DQD DQD VDDQ VSSQ DQD DQD DQD DQD VSSQ VDDQ DQD DQD DQPD A A CE 1 CE 2 BW D BW C BW B BW A CE 3 V DD V SS CLK GW BWE OE A...

Page 3: ...put Asynchronous Output Enable asynchronous input active LOW Controls the direction of the I O pins When LOW the I O pins behave as outputs When deasserted HIGH I O pins are tri stated and act as inpu...

Page 4: ...ncement logic while being delivered to the RAM array The Write signals GW BWE and BW A D and ADV inputs are ignored during this first cycle ADSP triggered Write accesses require two clock cycles to co...

Page 5: ...egrity is guaranteed Accesses pending when entering the sleep mode are not considered valid nor is the completion of the operation guaranteed The device must be deselected prior to entering the sleep...

Page 6: ...ycle Continue Burst Next H X X L X H L L X L H D READ Cycle Suspend Burst Current X X X L H H H H L L H Q READ Cycle Suspend Burst Current X X X L H H H H H L H Tri State READ Cycle Suspend Burst Curr...

Page 7: ...H X X X X Read H L H H H H Write Byte A DQA and DQPA H L H H H L Write Byte B DQB and DQPB H L H H L H Write Bytes B A H L H H L L Write Byte C DQC and DQPC H L H L H H Write Bytes C A H L H L H L Wri...

Page 8: ...for 3 3V I O IOL 8 0 mA 0 4 V for 2 5V I O IOL 1 0 mA 0 4 VIH Input HIGH Voltage 8 for 3 3V I O 2 0 VDD 0 3V V for 2 5V I O 1 7 VDD 0 3V V VIL Input LOW Voltage 8 for 3 3V I O 0 3 0 8 V for 2 5V I O 0...

Page 9: ...ollow standard test methods and procedures for measuring thermal impedance per EIA JESD51 30 32 C W JC Thermal Resistance Junction to Case 6 85 C W AC Test Loads and Waveforms Note 10 Tested initially...

Page 10: ...ld after CLK Rise 0 5 ns tADVH ADV Hold after CLK Rise 0 5 ns tWEH GW BWE BW A D Hold after CLK Rise 0 5 ns tDH Data Input Hold after CLK Rise 0 5 ns tCEH Chip Enable Hold after CLK Rise 0 5 ns Notes...

Page 11: ...CE3 is HIGH tCYC t CL CLK ADSP t ADH t ADS ADDRESS t CH OE ADSC CE tAH tAS A1 tCEH tCES GW BWE BW A D Data Out Q High Z tCLZ tDOH tCO ADV tOEHZ tCO Single READ BURST READ tOEV tOELZ tCHZ ADV suspends...

Page 12: ...ADS ADDRESS tCH OE ADSC CE tAH tAS A1 tCEH tCES BWE BW A D Data Out Q High Z ADV BURST READ BURST WRITE D A2 D A2 1 D A2 1 D A1 D A3 D A3 1 D A3 2 D A2 3 A2 A3 Data In D Extended BURST WRITE D A2 2 Si...

Page 13: ...e is performed 20 GW is HIGH Switching Waveforms continued tCYC tCL CLK ADSP tADH tADS ADDRESS tCH OE ADSC CE tAH tAS A2 tCEH tCES BWE BW A D Data Out Q High Z ADV Single WRITE D A3 A4 A5 A6 D A5 D A6...

Page 14: ...entering ZZ mode See Cycle Descriptions table for all possible signal conditions to deselect the device 22 DQs are in High Z when exiting ZZ sleep mode Switching Waveforms continued t ZZ I SUPPLY CLK...

Page 15: ...oration PowerPC is a registered trademark of IBM Corporation All product and company names mentioned in this document may be trademarks of their respective holders Ordering Information Not all of the...

Page 16: ...ress Semiconductor Corporation on Page 1 from 3901 North First Street to 198 Champion Court Removed 133MHz Speed bin Changed three state to tri state Modified test condition from VIH VDD to VIH VDD Mo...

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