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2-Mbit (64K x 32) Pipelined SRAM with

NoBL™ Architecture

CY7C1334H

Cypress Semiconductor Corporation

198 Champion Court

San Jose

,

CA 95134-1709

408-943-2600

Document #: 38-05678 Rev. *B

 Revised February 6, 2006

Features

• Pin compatible and functionally equivalent to ZBT™ 

devices 

• Internally self-timed output buffer control to eliminate 

the need to use OE

• Byte Write capability

• 64K x 32 common I/O architecture 

• 3.3V core power supply

• 3.3V/2.5V I/O operation

• Fast clock-to-output times 

— 3.5 ns (for 166-MHz device)

— 4.0 ns (for 133-MHz device)

• Clock Enable (CEN) pin to suspend operation

• Synchronous self-timed write 

• Asynchronous output enable (OE)

• Offered in Lead-Free JEDEC-standard 100-pin TQFP 

package 

• Burst Capability—linear or interleaved burst order

• “ZZ” Sleep mode option

Functional Description

[1]

The CY7C1334H is a 3.3V/2.5V, 64K x 32
synchronous-pipelined Burst SRAM designed specifically to
support unlimited true back-to-back Read/Write operations
without the insertion of wait states. The CY7C1334H is
equipped with the advanced No Bus Latency™ (NoBL™) logic
required to enable consecutive Read/Write operations with
data being transferred on every clock cycle. This feature
dramatically improves the throughput of the SRAM, especially
in systems that require frequent Write/Read transitions.

All synchronous inputs pass through input registers controlled
by the rising edge of the clock. All data outputs pass through
output registers controlled by the rising edge of the clock. The
clock input is qualified by the Clock Enable (CEN) signal,
which, when deasserted, suspends operation and extends the
previous clock cycle. Maximum access delay from the clock
rise is 3.5 ns (166-MHz device)

Write operations are controlled by the four Byte Write Select
(BW

[A:D]

) and a Write Enable (WE) input. All writes are

conducted with on-chip synchronous self-timed write circuitry.

Three synchronous Chip Enables (CE

1

, CE

2

, CE

3

) and an

asynchronous Output Enable (OE) provide for easy bank
selection and output tri-state control. In order to avoid bus
contention, the output drivers are synchronously tri-stated
during the data portion of a write sequence.

Note: 

1. For best-practices recommendations, please refer to the Cypress application note 

System Design Guidelines 

on www.cypress.com.

A0, A1, A

C

MODE

BW

A

BW

B

WE

CE1
CE2
CE3

OE

READ LOGIC

DQs

D

A

T

A

S

T

E

E

R

I

N

G

O

U

T

P

U

T

B

U

F

F

E

R

S

MEMORY

ARRAY

E

E

INPUT

REGISTER 0

ADDRESS

REGISTER 0

WRITE ADDRESS

REGISTER 1

WRITE ADDRESS

REGISTER 2

WRITE REGISTRY

AND DATA COHERENCY

CONTROL LOGIC

BURST

LOGIC

A0'

A1'

D1
D0

Q1
Q0

A0

A1

C

ADV/LD

ADV/LD

E

INPUT

REGISTER 1 

S

E

N

S

E

A

M

P

S

E

CLK

CEN

WRITE

DRIVERS

BW

C

BW

D

ZZ

SLEEP 

CONTROL

O

U

T

P

U

T

R

E

G

I

S

T

E

R

S

Logic Block Diagram

[+] Feedback 

Summary of Contents for CY7C1334H

Page 1: ...quent Write Read transitions All synchronous inputs pass through input registers controlled by the rising edge of the clock All data outputs pass through output registers controlled by the rising edge...

Page 2: ...DQA NC NC DQC DQC VDDQ VSSQ DQC DQC DQC DQC VSSQ VDDQ DQC DQC NC VDD NC VSS DQD DQD VDDQ VSSQ DQD DQD DQD DQD VSSQ VDDQ DQD DQD NC A A CE 1 CE 2 BW D BW C BW B BW A CE 3 V DD V SS CLK WE CEN OE A A 1...

Page 3: ...ins are tri stated and act as input data pins OE is masked during the data portion of a write sequence during the first clock when emerging from a deselected state when the device has been deselected...

Page 4: ...sequence and will wrap around when incremented sufficiently A HIGH input on ADV LD will increment the internal burst counter regardless of the state of Chip Enables inputs or WE WE is latched at the b...

Page 5: ...rst Next X L H X L X L L H Data In D NOP WRITE ABORT Begin Burst None L L L L H X L L H Tri State WRITE ABORT Continue Burst Next X L H X H X L L H Tri State IGNORE CLOCK EDGE Stall Current X L X X X...

Page 6: ...H Write Bytes D A L L H H L Write Bytes D B L L H L H Write Bytes D B A L L H L L Write Bytes D C L L L H H Write Bytes D C A L L L H L Write Bytes D C B L L L L H Write All Bytes L L L L L ZZ Mode El...

Page 7: ...for 3 3V I O 2 0 VDD 0 3V V for 2 5V I O 1 7 VDD 0 3V VIL Input LOW Voltage 9 for 3 3V I O 0 3 0 8 V for 2 5V I O 0 3 0 7 IX Input Leakage Current except ZZ and MODE GND VI VDDQ 5 5 A Input Current o...

Page 8: ...llow standard test methods and procedures for measuring thermal impedance per EIA JESD51 30 32 C W JC Thermal Resistance Junction to Case 6 85 C W AC Test Loads and Waveforms Notes 11 Tested initially...

Page 9: ...CLK Rise 0 5 0 5 ns tALH ADV LD Hold after CLK Rise 0 5 0 5 ns tWEH GW BW A D Hold after CLK Rise 0 5 0 5 ns tCENH CEN Hold after CLK Rise 0 5 0 5 ns tDH Data Input Hold after CLK Rise 0 5 0 5 ns tCE...

Page 10: ...ce is determined by the status of the MODE 0 Linear 1 Interleaved Burst operations are optional WRITE D A1 1 2 3 4 5 6 7 8 9 CLK t CYC tCL tCH 10 CE tCEH tCES WE CEN tCENH tCENS BW A D ADV LD tAH tAS...

Page 11: ...escription table for all possible signal conditions to deselect the device 23 I Os are in High Z when exiting ZZ sleep mode Switching Waveforms continued READ Q A3 4 5 6 7 8 9 10 CLK CE WE CEN BW A D...

Page 12: ...d in this document are the trademarks of their respective holders Ordering Information Not all of the speed package and temperature ranges are available Please contact your local sales representative...

Page 13: ...or Corporation on Page 1 from 3901 North First Street to 198 Champion Court Changed Three State to Tri State Modified Input Load to Input Leakage Current except ZZ and MODE in the Electrical Character...

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