CY7C1018DV33
Document #: 38-05465 Rev. *D
Page 5 of 9
Data Retention Characteristics
(Over the Operating Range)
Parameter
Description
Conditions
Min.
Max.
Unit
V
DR
V
CC
for Data Retention
2
V
I
CCDR
Data Retention Current
V
CC
= V
DR
= 2.0V, CE > V
CC
– 0.3V,
V
IN
> V
CC
– 0.3V or V
IN
< 0.3V
3
mA
t
CDR
[3]
Chip Deselect to Data Retention Time
0
ns
t
R
[12]
Operation Recovery Time
t
RC
ns
Data Retention Waveform
Switching Waveforms
Read Cycle No. 1 (Address Transition Controlled)
[13, 14]
Read Cycle No. 2 (OE Controlled)
[14, 15]
3.0V
3.0V
t
CDR
V
DR
>
2V
DATA RETENTION MODE
t
R
CE
V
CC
PREVIOUS DATA VALID
DATA VALID
RC
t
AA
t
OHA
t
RC
ADDRESS
DATA OUT
50%
50%
DATA VALID
t
RC
t
ACE
t
DOE
t
LZOE
t
LZCE
t
PU
HIGH IMPEDANCE
t
HZOE
t
HZCE
t
PD
HIGH
ICC
ISB
IMPEDANCE
OE
CE
ADDRESS
DATA OUT
V
CC
SUPPLY
CURRENT
Notes
12. Full device operation requires linear V
CC
ramp from V
DR
to V
CC(min.)
> 50
µ
s or stable at V
CC(min.)
> 50
µ
s.
13. Device is continuously selected. OE, CE = V
IL
.
14. WE is HIGH for Read cycle.
15. Address valid prior to or coincident with CE transition LOW.
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