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KIT8020CRD8FF1217P-1_UM Rev -
User Manual
is for the signal/logic inputs and supply voltage for ICs. The definition of CON4 for
each pin is shown in table 2.
Table. 2 Pin definitions for connector CON4
Connector CON4 Pin
CRD8FF1217P-1
Pin1
N/A
Pin2
N/A
Pin3
N/A
Pin4
N/A
Pin5
VCC: +12Vdc
Pin6
VCC_RTN: GND for +12Vdc
Pin7
Input_HS: signal input for Q2
Pin8
Input_HS_RTN: signal ground for Q2
Pin9
Input_LS: signal input for Q1
Pin10
Input_LS_RTN: signal ground for Q1
5.3 Board design
SiC device is a fast switching device, and it
is important to maximize SiC’s high
performance and minimize ringing with fast switching. The EVL board introduces
some design approaches to minimize the ringing on the board:
The gate drive and logic signal are put on top of the PCB board, while the main
power trace and switching devices are put on the bottom layer. There is no
crossover or overlap between gate signal and switching power trace, which
can minimize high dv/dt and di/dt noise influence from the switching node to
gate signal.
Four de-coupling film capacitors with value 10nF, 10nF, 0.1uF and 5uFare
placed close to the SiC devices, and it can reduce high frequency switching
loop and bypass noise within switching loop.
The layout of gate drive circuitry is designed with symmetric trace distance,
which can introduce balance impendence on the gate drive. Also, the gate
drive is placed as close as possible to the SiC MOSFETs.
The power trace layout is optimized to reduce the switching loops.
6. CREE Devices
SiC devices including SiC MOSFET and SiC Schottky diodes are recognized as next
generation wide bandgap devices. It can provide fast switching with less loss
compared to conventional Si devices. Cree
is the world’s leading manufacturer of
silicon-carbide Schottky diodes and MOSFETs for efficient power conversion. Two
sample 20A, 1200V rated SiC MOSFET devices and two 20A, 1200V rated Schottky
diodes are provided in the kit. However, other samples ranging from 5A to 50A can be
ordered online (
www.cree.com/power
)
