AT90S4414/8515
70
The Program and Data memory arrays on the AT90S4414/8515 are programmed byte-by-byte in either programming
modes. For the EEPROM, an auto-erase cycle is provided within the self-timed write operation in the serial programming
mode. During programming, the supply voltage must be in accordance with Table 27.
Parallel Programming
This section describes how to parallel program and verify Flash Program memory, EEPROM Data memory, Lock bits and
Fuse bits in the AT90S4414/8515.
Signal Names
In this section, some pins of the AT90S4414/AT908515 are referenced by signal names describing their function during
parallel programming. See Figure 60 and Table 28. Pins not described in Table 28 are referenced by pin names.
The XA1/XA0 pins determine the action executed when the XTAL1 pin is given a positive pulse. The bit coding are shown
in Table 29.
When pulsing WR or OE, the command loaded determines the action executed. The Command is a byte where the differ-
ent bits are assigned functions as shown in Table 30.
Figure 60. Parallel Programming
Table 27. Supply Voltage During Programming
Part
Serial Programming
Parallel Programming
AT90S4414
2.7 - 6.0V
4.5 - 5.5V
AT90S8515
2.7 - 6.0V
4.5 - 5.5V
AT90S4414/8515
VCC
+5V
RESET
GND
XTAL1
PD1
PD2
PD3
PD4
PD5
PD6
+12 V
RDY/BSY
OE
BS
XA0
XA1
WR
PB7 - PB0
DATA