47
AT90S1200
0838H–AVR–03/02
Serial Programming
Characteristics
Figure 36.
Serial Programming Timing
Table 20.
Serial Programming Characteristics, T
A
= -40
°
C to 85
°
C, V
CC
= 2.7 - 6.0V
(unless otherwise noted)
Symbol
Parameter
Min
Typ
Max
Units
1/t
CLCL
Oscillator Frequency (V
CC
= 2.7 - 4.0V)
0
4.0
MHz
t
CLCL
Oscillator Period (V
CC
= 2.7 - 4.0V)
250.0
ns
1/t
CLCL
Oscillator Frequency (V
CC
= 4.0 - 6.0V)
0
12.0
MHz
t
CLCL
Oscillator Period (V
CC
= 4.0 - 6.0V)
83.3
ns
t
SHSL
SCK Pulse Width High
4.0 t
CLCL
ns
t
SLSH
SCK Pulse Width Low
t
CLCL
ns
t
OVSH
MOSI Setup to SCK High
1.25 t
CLCL
ns
t
SHOX
MOSI Hold after SCK High
2.5 t
CLCL
ns
t
SLIV
SCK Low to MISO Valid
10.0
16.0
32.0
ns
Table 21.
Minimum Wait Delay after the Chip Erase Instruction
Symbol
3.2V
3.6V
4.0V
5.0V
t
WD_ERASE
18 ms
14 ms
12 ms
8 ms
Table 22.
Minimum Wait Delay after Writing a Flash or EEPROM Location
Symbol
3.2V
3.6V
4.0V
5.0V
t
WD_PROG
9 ms
7 ms
6 ms
4 ms
MOSI
MISO
SCK
t
OVSH
t
SHSL
t
SLSH
t
SHOX
t
SLIV