Features
•
Single Voltage Read/Write Operation: 2.65V to 3.6V
•
Access Time – 70 ns
•
Sector Erase Architecture
– Thirty-one 32K Word (64K Bytes) Sectors with Individual Write Lockout
– Eight 4K Word (8K Bytes) Sectors with Individual Write Lockout
•
Fast Word Program Time – 10 µs
•
Fast Sector Erase Time – 100 ms
•
Suspend/Resume Feature for Erase and Program
– Supports Reading and Programming from Any Sector by Suspending Erase
of a Different Sector
– Supports Reading Any Word by Suspending Programming of Any Other Word
•
Low-power Operation
– 10 mA Active
– 15 µA Standby
•
VPP Pin for Write Protection and Accelerated Program Operation
•
WP Pin for Sector Protection
•
RESET Input for Device Initialization
•
Flexible Sector Protection
•
TSOP and CBGA Package Options
•
Top or Bottom Boot Block Configuration Available
•
128-bit Protection Register
•
Minimum 100,000 Erase Cycles
•
Common Flash Interface (CFI)
•
Green (Pb/Halide-free) Packaging
1.
Description
The AT49BV160D(T) is a 2.7-volt 16-megabit Flash memory organized as 1,048,576
words of 16 bits each. The memory is divided into 39 sectors for erase operations.
The device is offered in a 48-lead TSOP and a 46-ball CBGA package. The device
has CE and OE control signals to avoid any bus contention. This device can be read
or reprogrammed using a single power supply, making it ideally suited for in-system
programming.
The device powers on in the read mode. Command sequences are used to place
the device in other operation modes such as program and erase. The device has
the capability to protect the data in any sector (see
“Flexible Sector Protection” on
To increase the flexibility of the device, it contains an Erase Suspend and Program
Suspend feature. This feature will put the erase or program on hold for any amount of
time and let the user read data from or program data to any of the remaining sectors
within the memory.
The VPP pin provides data protection. When the V
PP
input is below 0.4V, the program
and erase functions are inhibited. When V
PP
is at 1.65V or above, normal program
and erase operations can be performed. With V
PP
at 10.0V, the program (Dual-word
Program Command) operation is accelerated.
16-megabit
(1M x 16)
3-volt Only
Flash Memory
AT49BV160D
AT49BV160DT
3591A–FLASH–12/05
