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English
H81M-DGS R2.0
DRAM Configuration
CAS# Latency (tCL)
The time between sending a column address to the memory and the beginning of the data
in response.
RAS# to CAS# Delay (tRCD)
The number of clock cycles required between the opening of a row of memory and
accessing columns within it.
Row Precharge Time (tRP)
The number of clock cycles required between the issuing of the precharge command
and opening the next row.
RAS# Active Time (tRAS)
The number of clock cycles required between a bank active command and issuing the
precharge command.
Command Rate (CR)
The delay between when a memory chip is selected and when the first active command can
be issued.
Write Recovery Time (tWR)
The amount of delay that must elapse after the completion of a valid write operation,
before an active bank can be precharged.
Summary of Contents for H81M-DGS R2.0
Page 1: ...User Manual ...
Page 18: ...14 English 4 5 3 ...
Page 20: ...16 English 2 2 Installing the CPU Fan and Heatsink 1 2 C P U _ F A N ...
Page 22: ...18 English 1 2 3 ...
