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MBIST Instruction Register
3-6
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ARM DDI 0414C
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Read Write March (x-fast or y-fast)
(w0) (r0, w1)
⇓
(r1, w0) (r0)
Read Write Read March (x-fast or y-fast)
(w0) (r0, w1, r1)
⇓
(r1, w0, r0) (r0)
Bang
This test is always performed in x-fast. It executes multiple consecutive
writes and reads effectively stressing a bit-line pair. While this pattern
does detect stuck-at faults, its primary intent is to address the analog
characteristics of the memory. In the following algorithm description,
row 0 indicates a read or write of the data seed to the sacrificial row, this
is always the first row of the column being addressed.
(w0) (r0, w0, w0(row 0)
×
6)
(r0
×
5, w0(row 0), r0) (r0)
Go/No-Go
If you do not want to implement your own memory test strategy, use the
Go/No-Go test pattern that performs the algorithms that Table 3-2 shows.
This test suite provides a comprehensive test of the arrays. The series of
tests in Go/No-Go are the result of the experience in memory testing by
ARM memory test engineers.
Table 3-2 Go/No-Go test pattern
Sequence
Algorithm
Data
1
Write Checkerboard
Data seed
2
Read Checkerboard
Data seed
3
Write Checkerboard
Data seed
4
Read Checkerboard
Data seed
5
Read Write Read March (y-fast)
0x6
6
Bang
0xF