Alinco DR-03T, Service Manual

Page: 16 / 36

Nch MOS FET
14) RD16HHF1 (XE0056)
O U T L I N E D R A W I N G
9
.
5
m
P IN
© GATE
(2) SOURCE
® DRAIN
<D FIN (SOURCE)
ABSOLUTE MAXIMUM RATING ( Tc = 2 5 °C, unless otherwise noted )
Symbol Parameter
Conditions
Ratings Unit
VDSS Drain to source voltage
>
0
ii CO
5
50 V
VGSS Gate to source voltage
Vds = OV
+/-.20
V
Pch Channel dissipation
Tc = 25 °C 56.8 W
Pin Input Power
Zg = Zl = 50 Q 0.8 W
ID Drain to source Current
- 5 A
Tch Channel temperature
-
150 °C
Tstg Storage temperature
-
' -40 t o +150 °C
Rth j-c Thermal resistance Junction to case 2.2
° c /w .
ELECTRICAL CHARACTERISTICS ( Tc = 25 °C, unless otherwise noted )
Symbol
Parameter Conditions
Limits
Unit
Min Typ Max
loss
Zero gate voltage drain current
VD
s
= 1 7 V ,V G
s
= 0 V
-
10
ß
A
I
gss
Gate to source leak current
VGS = 10V,VDS = 0V
- - 1
/i A
V
th
Gate threshold voltage
Vos = 12V, I
ds
= 1mA
1.7
-
7.7 V
Pout Output Power f= 30MHz, V
qd
= 12.5V
Pin = 0.4W, ldq=0.5A
16 19
-
W
n
D
Drain Efficiency
55 65 - %
Load VSWR Tolerance VDD = 15.2V, P0 = 16W (Pin Control)
f = 30MHz, Jdq = 0.5A, Zg = 50 ß
Load VSWR = 20:1 (ALL Phase)
No degradation
16