BIOS Setup
3-11
DRAM CAS Latency (2.5):
Enables you to select the CAS latency time in HCLKs of 2/2 or 3/3. The value is set at
the factory depending on the DRAM installed. Do not change the values in this field
unless you change specifications of the installed DRAM or the installed CPU.
Bank Interleave (Disabled):
Enable this item to increase memory speed. When enabled, separate memory banks
are set for odd and even addresses and the next byte of memory can be accessed while
the current byte is being refreshed.
Precharge to Active (3T):
This item is used to designate the minimum Row Precharge time of the SDRAM
devices on the module.
DRAM must continually be refreshed or it will lose its data. Normally, DRAM is
refreshed entirely as the result of a single request.
This option allows you to determine the number of CPU clocks allocated for the Row
Address Strobe (RAS) to accumulate its charge before the DRAM is refreshed. If
insufficient time is allowed, refresh may be incomplete and data lost.
Tras Non-DDR400/DDR400(7T/10T):
This item allows you to increase DRAM performance.
Active to CMD (3T):
This item specifies the minimum required delay between activation of different rows.
DRAM Burst Length(4)
This item describes which burst lengths are supported by the devices on the
motherboard. 4-level can provide faster performance but may result in instability
whereas 8-level gives the most stable but slowest performance.
DRAM Command Rate (2T Command)
This item enables you to specify the waiting time for the CPU to issue the next
command after issuing the command to the DDR memory. We recommend that you
leave this item at the default value.
Press <Esc> to return to the Advanced Chipset Features page.
User’s Manual
