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viasis 3003 user manual
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controlling
gmbh
Maximal assembly per board
4 p-ch MOSFET power transistors
Max. switched voltage (UGS @ 25°C)
20 Volt DC
Maximal current (ID @ 25°C)
74 Ampere DC
Maximal switch power (Ptot @ 25°C)
200 Watt
Inner resistance (RDSon)
0,02 Ohm
Switching times (ton/toff)
< 200 ns
Switch protection
Reverse diode Source-Drain
Hints:
- MOSFET power transistors do not provide galvanic isolation between viasis
electronic and switched load, but have no wear parts as relays have.
- MOSFET power transistors switch inductive and capacitive loads without
being damaged.
- The MOSFET power transistors can additionally be controlled with an envi-
ronment brightness dependent PWM (pulse width modulated) signal. Therefore
they are appropriate for supplementary customer specific external LED dis-
plays.
10.3.6 Technical Data - GSM/GPRS radio module and SIM card slot
Type of radio module
Quectel M10
Transmit frequencies quad band
850/900/1800/1900 MHz
Maximal transmit power
2W @ 850/900 MHz, 1W @ 1800/1900 MHz
CSD data transfer speed
maximal 14,4 kBaud
GPRS multislot class and mobile station class Slot 12/10/8 / Class B
GPRS data transfer speed
maximal 85,6 kBaud (up- and downlink)
Data protocols and -interfaces
PPP, TCP/IP, HTTP, FTP, SMS, MMS, FAX
SIM card slot standard
Mini-SIM ISO/IEC 7810:2003 – ID-000
CE test and product standards
EN301489-7 V1.3.1:2005 (EMC)
EN301489-1 V1.8.1:2008 (EMC)
EN301511 V9.0.2 (GSM radio spectrum)
ETSI TS 151010-1 V1.8.0 (Mobile stations)
EN60950-1 :2001+A11 :2004 (Electr. safety)
Compliance
CE, FCC, IC
GSM/GPS combined antenna type
Siretta Tango 19
GSM antenna gain
2dBi@ 900 MHz / 1 dBi@1900MHz
Operating temperature range
- 45° C to +85°C