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SARA-G3 series - System Integration Manual
UBX-13000995 - R06 Objective Specification Design-in
Page 124 of 218
SARA-G3 series
41 VSIM
39 SIM _IO
38 SIM _CLK
40
SIM _RST
4
V_INT
42 SIM _DET
SIM CHIP
SIM Chip
Bottom View
(contacts side)
C1
VPP (C6)
VCC (C1)
IO (C7)
CLK (C3)
RST (C2)
GND (C5)
C2 C3 C5
U1
C4
2
8
3
6
7
1
C1 C5
C2 C6
C3 C7
C4 C8
8
7
6
5
1
2
3
4
TP
Figure 44: Application circuit for the connection to a single solderable SIM chip, with SIM detection not implemented
Reference Description Part Number - Manufacturer
C1, C2, C3, C4 47 pF Capacitor Ceramic C0G 0402 5% 50 V GRM1555C1H470JA01 - Murata
C5 100 nF Capacitor Ceramic X7R 0402 10% 16 V GRM155R71C104KA01 - Murata
U1 SIM chip (M2M UICC Form Factor) Various Manufacturers
Table 24: Example of components for the connection to a single solderable SIM chip, with SIM detection not implemented
Guidelines for single SIM card connection with detection
SIM card detection is not supported by SARA-G300-00S and SARA-G310-00S modules.
A removable SIM card placed in a SIM card holder must be connected to the SIM card interface of
SARA-G3 modules as described in
Figure 45Figure 45 , where the optional SIM card detection feature is
implemented.
Follow these guidelines connecting the module to a SIM connector implementing SIM presence detection:
 Connect the UICC / SIM contacts C1 (VCC) and C6 (VPP) to the VSIM pin of the module
 Connect the UICC / SIM contact C7 (I/O) to the SIM_IO pin of the module
 Connect the UICC / SIM contact C3 (CLK) to the SIM_CLK pin of the module
 Connect the UICC / SIM contact C2 (RST) to the SIM_RST pin of the module
 Connect the UICC / SIM contact C5 (GND) to ground
 Connect one pin of the mechanical switch integrated in the SIM connector (e.g. the SW2 pin as
described in
Figure 45Figure 45 ) to the SIM_DET input pin of the module
 Connect the other pin of the mechanical switch integrated in the SIM connector (e.g. the SW1 pin as
described in
Figure 45Figure 45 ) to the V_INT 1.8 V supply output of the module by means of a
strong (e.g. 1 k

) pull-up resistor, as the R1 resistor in Figure 45Figure 45

Provide a weak (e.g. 470 k

) pull-down resistor at the SIM detection line, as the R2 resistor in
Figure 45Figure 45
 Provide a 100 nF bypass capacitor (e.g. Murata GRM155R71C104K) at the SIM supply line
(
VSIM ), close to the relevant pad of the SIM connector, to prevent digital noise