LEON-G100 / LEON-G200 - System Integration Manual
GSM.G1-HW-09002-G3
Preliminary
System description
Page 9 of 125
1.2.1
Functional blocks
LEON-G100/LEON-G200 modules consist of the following functional blocks:
RF
Baseband
Power Management
1.2.1.1
RF
The RF block is composed of the following main elements:
RF transceiver (integrated in the GSM/GPRS single chip) performing modulation, up-conversion of the
baseband I/Q signals, down-conversion and demodulation of the RF received signals. The RF transceiver
includes:
Constant gain direct conversion receiver with integrated LNAs;
Highly linear RF quadrature demodulator;
Digital Sigma-Delta transmitter modulator;
Fractional-N Sigma-Delta RF synthesizer;
3.8 GHz VCO;
Digital controlled crystal oscillator.
Transmit module, which amplifies the signals modulated by the RF transceiver and connects the single
antenna input/output pin of the module to the suitable RX/TX path, via its integrated parts:
Power amplifier;
Antenna switch;
RX diplexer SAW (band pass) filters
26 MHz crystal, connected to the digital controlled crystal oscillator to perform the clock reference in active
or connected mode
1.2.1.2
Baseband
The Baseband block is composed of the following main elements:
Baseband integrated in the GSM/GPRS single chip, including:
Microprocessor;
DSP (for GSM/GPRS Layer 1 and audio processing);
Peripheral blocks (for parallel control of the digital interfaces);
Audio analog front-end;
Memory system in a multi-chip package integrating two devices:
NOR flash non-volatile memory;
PSRAM volatile memory;
32.768 kHz crystal, connected to the oscillator of the RTC to perform the clock reference in idle or power-
off mode
1.2.1.3
Power Management
The Power Management block is composed of the following main elements:
Voltage regulators integrated in the GSM/GPRS single chip for direct connection to battery
Charging control circuitry
