Toshiba TPC8402, Руководство пользователя

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TPC8402
2006-11-13 1
TOSHIBA Field Effect Transistor Silicon N, P Channel MOS Type ( π− MOS
VI
/U − MOSII)
TPC8402
Lithium-Ion Secondary Battery Applications
Notebook PCs
Portable Equipment Applications
z
Low drain − source ON resistance : P Channel R
DS (ON)
= 27 m Ω (typ.)
N Channel R
DS (ON)
= 37 m Ω (typ.)
z
High forward transfer admittance : P Channel |Y
fs
| = 7 S (typ.)
N Channel |Y
fs
| = 6 S (typ.)
z
Low leakage current : P Channel I
DSS
= − 10 µA (V
DS
= − 30 V)
N Channel I
DSS
= 10 µA (V
DS
= 30 V)
z
Enhancement − mode
: P Channel V
th
= − 0.8~ − 2.0 V (V
DS
= − 10 V, I
D
= − 1mA)
N Channel V
th
= 0.8~2.0 V (V
DS
= 10 V, I
D
= 1mA)
Absolute Maximum Ratings
(Ta = 25°C)
Rating
Characteristics Symbol
P Channel N Channel
Unit
Drain-source voltage V
DSS
− 30 30 V
Drain-gate voltage (R
GS
=
20 k
Ω
) V
DGR
− 30 30 V
Gate-source voltage V
GSS
±20 ±20 V
DC (Note 1) I
D
− 4.5 5
Drain current
Pulse (Note 1) I
DP
− 18 20
A
Single-device operation
(Note 3a)
P
D (1)
1.5 1.5
Drain power
dissipation
(t = 10s)
(Note
2a)
Single-device value at
dual operation
(Note 3b)
P
D (2)
1.0 1.0
Single-device operation
(Note 3a)
P
D (1)
0.75 0.75
Drain power
dissipation
(t = 10s)
(Note
2b)
Single-device value at
dual operation (Note 3b)
P
D (2)
0.45 0.45
W
Single-pulse avalanche energy E
AS
26.3
(Note 4a)
32.5
(Note 4b)
mJ
Avalanche current I
AR
− 4.5 5 A
Repetitive avalanche energy
Single-device value at operation
(Note 2a, Note 3b, Note 5)
E
AR
0.10 mJ
Channel temperature T
ch
150 °C
Storage temperature range T
stg
− 55~150 °C
Note: For Notes 1 to 5, see the next page.
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
This transistor is an electrostatic-sensitive device. Handle with care.
Unit: mm
JEDEC ―
JEITA ―
TOSHIBA 2-6J1E
Weight: 0.080 g (typ.)
Circuit Configuration