texet TF-127, Руководство по обслуживанию

Страница: 161 / 205

SDRAM 128Mb F-die (x4, x8, x16) CMOS SDRAM
Rev. 1.2 August 2004
DC CHARACTERISTICS (x16)
(Recommended operating condition unless otherwise noted, T
A
= 0 to 70
°
C)
Parameter Symbol Test Condition
Version
Unit Note
-60 -75
Operating current
(One bank active)
I
CC1
Burst length = 1
t
RC
≥
t
RC
(min)
I
O
= 0 mA
130 100 mA 1
Precharge standby current in
power-down mode
I
CC2
P CKE
≤
V
IL
(max), t
CC
= 10ns 2
mA
I
CC2
PS CKE & CLK
≤
V
IL
(max), t
CC
=
∞
2
Precharge standby current in
non power-down mode
I
CC2
N
CKE
≥
V
IH
(min), CS
≥
V
IH
(min), t
CC
= 10ns
Input signals are changed one time during 20ns
20
mA
I
CC2
NS
CKE
≥
V
IH
(min), CLK
≤
V
IL
(max), t
CC
=
∞
Input signals are stable
10
Active standby current in
power-down mode
I
CC3
P CKE
≤
V
IL
(max), t
CC
= 10ns 5
mA
I
CC3
PS CKE & CLK
≤
V
IL
(max), t
CC
=
∞
5
Active standby current in
non power-down mode
(One bank active)
I
CC3
N
CKE
≥
V
IH
(min), CS
≥
V
IH
(min), t
CC
= 10ns
Input signals are changed one time during 20ns
30 mA
I
CC3
NS
CKE
≥
V
IH
(min), CLK
≤
V
IL
(max), t
CC
=
∞
Input signals are stable
25
mA
Operating current
(Burst mode)
I
CC4
I
O
= 0 mA
Page burst
150 140 mA 1
Refresh current I
CC5
t
RC
≥
t
RC
(min) 220 200 mA 2
Self refresh current I
CC6
CKE
≤
0.2V
C 2 mA 3
L 800 uA 4
1. Measured with outputs open.
2. Refresh period is 64ms.
3. K4S281632F-UC
4. K4S281632F-UL
5. Unless otherwise noted, input swing IeveI is CMOS(V
IH
/V
IL
=V
DDQ
/V
SSQ)
Notes :