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6
TPA3116D2, TPA3118D2, TPA3130D2
SLOS708G – APRIL 2012 – REVISED DECEMBER 2017
Product Folder Links:
Copyright © 2012–2017, Texas Instruments Incorporated
(1)
For more information about traditional and new thermal metrics, see the
Semiconductor and IC Package Thermal Metrics
application
report.
(2)
For the PCB layout please see the TPA3130D2EVM user guide.
(3)
For the PCB layout please see the TPA3118D2EVM user guide.
(4)
The heat sink drawing used for the thermal model data are shown in the application section, size: 14mm wide, 50mm long, 25mm high.
6.4 Thermal Information
THERMAL METRIC
(1)
TPA3130D2
TPA3118D2
TPA3116D2
UNIT
DAP
(2)
DAP
(3)
DAD
(4)
32 PINS
32 PINS
32 PINS
R
θ
JA
Junction-to-ambient thermal resistance
36
22
14
°C/W
ψ
JT
Junction-to-top characterization parameter
0.4
0.3
1.2
ψ
JB
Junction-to-board characterization parameter
5.9
4.7
5.7
6.5 DC Electrical Characteristics
T
A
= 25°C, AV
CC
= PV
CC
= 12 V to 24 V, R
L
= 4
Ω
(unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
| V
OS
|
Class-D output offset voltage (measured
differentially)
V
I
= 0 V, Gain = 36 dB
1.5
15
mV
I
CC
Quiescent supply current
SDZ = 2 V, No load or filter, PV
CC
= 12 V
20
35
mA
SDZ = 2 V, No load or filter, PV
CC
= 24 V
32
50
I
CC(SD)
Quiescent supply current in shutdown
mode
SDZ = 0.8 V, No load or filter, PV
CC
= 12 V
<50
µA
SDZ = 0.8 V, No load or filter, PV
CC
= 24 V
50
400
r
DS(on)
Drain-source on-state resistance,
measured pin to pin
PV
CC
= 21 V, I
out
= 500 mA, T
J
= 25°C
120
m
Ω
G
Gain (BTL)
R1 = 5.6 k
Ω
, R2 = Open
19
20
21
dB
R1 = 20 k
Ω
, R2 = 100 k
Ω
25
26
27
R1 = 39 k
Ω
, R2 = 100 k
Ω
31
32
33
dB
R1 = 47 k
Ω
, R2 = 75 k
Ω
35
36
37
G
Gain (SLV)
R1 = 51 k
Ω
, R2 = 51 k
Ω
19
20
21
dB
R1 = 75 k
Ω
, R2 = 47 k
Ω
25
26
27
R1 = 100 k
Ω
, R2 = 39 k
Ω
31
32
33
dB
R1 = 100 k
Ω
, R2 = 16 k
Ω
35
36
37
t
on
Turn-on time
SDZ = 2 V
10
ms
t
OFF
Turn-off time
SDZ = 0.8 V
2
µs
GVDD
Gate drive supply
IGVDD < 200 µA
6.4
6.9
7.4
V
V
O
Output voltage maximum under PLIMIT
control
V(PLIMIT) = 2 V; V
I
= 1 V
rms
6.75
7.90
8.75
V