D[15:0]
Command
nBE0/CLE
nCS
nWE
nOE
nADV/ALE
B
G
D
C
F
A
E
Preliminary
Basic Programming Model
www.ti.com
K = (OEOffTime - OEOnTime) * (1 + TimeParaGranularity) * GPMC_FCLK period
L = RdCycleTime * (1 + TimeParaGranularity) * GPMC_FCLK period
M = (CSRdOffTime - OEOffTime * (TimeParaGranu 1) + 0.5 * (CSExtraDelay - OEExtraDelay ) *
GPMC_FCLK period
shows a command latch cycle timing simplified example where formulas are associated
with signal waves.
Figure 5-44. NAND Command Latch Cycle Timing Simplified Example
5.3.6.1.2 Synchronous NOR Flash Timing Parameters Formulas
This section lists all formulas to use in order to calculate synchronous NOR timing parameters. This is
the case when GPMC_CONFIG1_i[11-10] DEVICETYPE = 0 and when READTYPE or WRITETYPE
are set to synchronous mode.
Table 5-43. Synchronous NOR Formulas Description Table
Configuration
Unit
Description
Parameter
A
ns
Pulse duration - GPMC_CS low
B
ns
Delay time - address bus valid to GPMC_CLK first edge
Delay time - GPMC_BE0_CLE/GPMC_BE1 valid to GPMC_CLK first edge
C
ns
Pulse duration - GPMC_BE0_CLE/GPMC_BE1 low
D
ns
Delay time - GPMC_CLK rising edge to GPMC_BE0_CLE/GPMC_BE1 invalid
Delay time - GPMC_CLK rising edge to GPMC_ADV_ALE invalid
E
ns
Delay time - GPMC_CLK rising edge to GPMC_CS invalid
Delay time - GPMC_CLK rising edge to GPMC_OE invalid
F
ns
Delay time - GPMC_CLK rising edge to GPMC_CS transition
G
ns
Delay time - GPMC_CLK rising edge to GPMC_ADV_ALE transition
H
ns
Delay time - GPMC_CLK rising edge to GPMC_OE transition
I
ns
Delay time - GPMC_CLK rising edge to GPMC_WE transition
J
ns
Delay time - GPMC_CLK rising edge to GPMC_AD data bus transition
Delay time - GPMC_CLK rising edge to GPMC_BE0_CLE/GPMC_BE1 transition
K
ns
Pulse duration - GPMC_ADV_ALE low
L
ns
Delay time - GPMC_WAIT invalid to first data latching GPMC_CLK edge
644 General-Purpose Memory Controller (GPMC)
SPRUGX9 – 15 April 2011
© 2011, Texas Instruments Incorporated
Содержание TMS320C6A816 Series
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