ST UM2975, Руководство пользователя, Страница: 4 / 63

• Power section based on SiC MOSFETs and SiC diodes:
–
High frequency operation (70 kHz)
– High efficiency: >98.6%
– Passive element weight and size reduction
• Control section based on the STM32G474RET3 microcontroller:
– Control and monitoring interfaces: SWD–UART, I²C and DACs
– 64-pin digital power connector
– LED status as UI
– Four integrated high-performance op-amps for additional features
1.4 Main characteristics
Table 1. Main characteristics
Description Symbol Min. Typ. Max. Unit Comments
Three-phase input voltage
V
AC
208 480
V
ACLL
AC line frequency Hz 47 63 Hz
Maximum output power
P
OUTmax
15
7
kW
V
AC
= 230 V
RMS
I
AC
= 21 V
RMS
V
AC
= 110 V
RMS
I
AC
= 21 V
RMS
Output voltage
V
DC
800 V
Power factor PF >0.99 - From 20% of load
Total harmonic distortion THDi <5 % From 20% of load
Switching frequency
f
sw
70 kHz
Table 2. Protection characteristics
Description Symbol Min. Typ. Max. Unit
HVDC overvoltage protection
V
DCovp
900 V
HVCAP overvoltage protection
V
CAPovp
500 V
AC overcurrent protection
I
ACovp
30 A
1.5 Reference design description
1.5.1 Power board
The figure below shows the power board of the STDES-VRECTFD reference design.
UM2975
Main characteristics
UM2975 - Rev 1
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