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Electrical characteristics
ST7LITEUS2, ST7LITEUS5
104/136
12.6 Memory
characteristics
T
A
= -40 to 125 °C, unless otherwise specified;
Table 57.
RAM and Hardware registers
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
V
RM
Data retention mode
1)
Halt mode (or Reset)
1.6
V
Table 58.
Flash Program memory
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
V
DD
Operating voltage for Flash
write/erase
2.4
(1)
1.
Minimum V
DD
supply voltage without losing data stored in RAM (in Halt mode or under reset) or in
hardware registers (only in Halt mode). Guaranteed by construction, not tested in production.
5.5
V
t
prog
Programming time for 1~32
bytes
(2)
2.
Up to 32 bytes can be programmed at a time.
T
A
=−
40 to +125°C
5
10
ms
Programming time for 1 kByte
T
A
=
+25°C
0.16
0.32
s
t
RET
Data retention
(3)
3.
Data based on reliability test results and monitored in production.
T
A
=
+55°C
(4)
4.
The data retention time increases when the T
A
decreases.
20
years
N
RW
Write erase cycles
T
A
=
+25°C
10k
(5)
5.
Design target value pending full product characterization.
cycles
I
DD
Supply current
(6)
6.
Guaranteed by Design. Not tested in production.
Read / Write / Erase
modes, f
CPU
= 8 MHz
,
V
DD
= 5.5 V
2.6 mA
No Read/No Write
Mode
100
μ
A
Power down mode /
Halt
0
0.1
μ
A
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