Sony Vaio VGN-S350F, Руководство по обслуживанию

Страница: 30 / 173

1-25
IC
VGN- S36C/S36GP/S36LP/S36SP/S36TP/S38CP/ S52B/
S62PS/S62PSY/S62S/ S350F/S350FP/ S360/S360P/ S370F
(J/AM /AO )
Confidential
M93C46-WDW6T (ST MICROELECTRONICS)
SERIAL MICROWIRE BUS EEPROM 1Kbit
– TOP VIEW –
M93C06/46/56/66 - W
Warning: DU = Don't Use
Table 1. Signal Names
Figure 1. Logic Diagram
MAXTG069 (MAXIM)
LOW-COST MULTICHEMISTRY BATTERY CHARGER
28 27 26 25 24 23 22
IINP CSSP CSSN DHI BST LX DLOV
8 9
10 11 12 13 14
SHDN
ICHG
ACIN
ACOK REFIN
ICTL GND
15
16
17
18
19
20
21
VCTL
BATT
CELLS
CSIN
CSIP
PGND
DLO
7
6
5
4
3
2
1
CCV
CCI
CCS
REF
CLS
LDO
DCIN
MAX1908
THIN QFN
TOP VIEW
ELECTRICAL CHARACTERISTICS
(VDCIN = VCSSP = VCSSN = 18V, VBATT = VCSIP = VCSIN = 12V, VREFIN = 3V, VVCTL = VICTL = 0.75 x VREFIN, CELLS = float, CLS =
REF, VBST - VLX = 4.5V, ACIN = GND = PGND = 0, CLDO = 1µF, LDO = DLOV, CREF = 1µF; CCI, CCS, and CCV are compensated
per Figure 1a;
TA = 0°C to +85°C , unless otherwise noted. Typical values are at TA = +25°C.)
PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNITS
CHARGE VOLTAGE REGULATION
VVCTL = VREFIN (2, 3, or 4 cells) -0.5 +0.5
VVCTL = VREFIN/20 (2, 3, or 4 cells) -0.5 +0.5
Battery Regulation Voltage
Accuracy
VVCTL = VLDO (2, 3, or 4 cells) -0.5 +0.5
%
VCTL Default Threshold VVCTL rising 4.0 4.1 4.2 V
REFIN Range (Note 1) 2.5 3.6 V
REFIN Undervoltage Lockout VREFIN falling 1.20 1.92 V
CHARGE CURRENT REGULATION
CSIP to CSIN Full-Scale Current-
Sense Voltage
VICTL = VREFIN 71.25 75 78.75 mV
VICTL = VREFIN -6 +6
VICTL = VREFIN x 0.6 -5 +5 Charging Current Accuracy
VICTL = VLDO -6 +6
%
ICTL Default Threshold VICTL rising 4.0 4.1 4.2 V
BATT/CSIP/CSIN Input Voltage
Range
0 19 V
VDCIN = 0 or VICTL = 0 or
SHDN
= 0 1
CSIP/CSIN Input Current
VCSIP = VCSIN = 12V 400 650
µA
Cycle-by-Cycle Maximum Current
Limit
IMAX RS2 = 0.015
Ω
6.0 6.8 7.5 A
ICTL Power-Down Mode
Threshold Voltage
VICTL rising
REFIN /
100
REFIN /
55
REFIN /
33
V
VVCTL = VICTL = 0 or 3V -1 +1
ICTL, VCTL Input Bias Current
VDCIN = 0, VVCTL = VICTL= VREFIN = 5V -1 +1
µA
ELECTRICAL CHARACTERISTICS (continued)
(V
DCIN
= V
CSSP
= V
CSSN
= 18V, V
BATT
= V
CSIP
= V
CSIN
= 12V, V
REFIN
= 3V, V
VCTL
= V
ICTL
= 0.75 x V
REFIN
, CELLS = float, CLS =
REF, V
BST
- V
LX
= 4.5V, ACIN = GND = PGND = 0, C
LDO
= 1µF, LDO = DLOV, C
REF
= 1µF; CCI, CCS, and CCV are compensated
per Figure 1a; T
A
= 0°C to +85°C , unless otherwise noted. Typical values are at T
A
= +25°C.)
PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNITS
VDCIN = 5V, VREFIN = 3V -1 +1
REFIN Input Bias Current
VREFIN = 5V -1 +1
µA
ICHG Transconductance GICHG VCSIP - VCSIN = 45mV 2.7 3 3.3 µA/mV
VCSIP - VCSIN = 75mV -6 +6
VCSIP - VCSIN = 45mV -5 +5 ICHG Accuracy
VCSIP - VCSIN = 5mV -40 +40
%
ICHG Output Current VCSIP - VCSIN = 150mV, VICHG = 0 350 µA
ICHG Output Voltage VCSIP - VCSIN = 150mV, ICHG = float 3.5 V
INPUT CURRENT REGULATION
CSSP-to-CSSN Full-Scale
Current-Sense Voltage
71.25 75 78.75 mV
VCLS = VREF -4 +4
Input Current-Limit Accuracy
VCLS = VREF / 2 -7.5 +7.5
%
CSSP, CSSN Input Voltage
Range
8 28 V
VDCIN = 0 0.1 1
CSSP, CSSN Input Current
VCSSP = VCSSN = VDCIN > 8V 350 600
µA
CLS Input Range 1.6 REF V
CLS Input Bias Current VCLS = 2V -1 +1 µA
IINP Transconductance GIINP VCSSP - VCSSN = 75mV 2.7 3 3.3 µA/mV
VCSSP - VCSSN = 75mV -5 +5
IINP Accuracy
VCSSP - VCSSN = 37.5mV -7.5 +7.5
%
IINP Output Current VCSSP - VCSSN = 150mV, VIINP = 0 350 µA
IINP Output Voltage VCSSP - VCSSN = 150mV,VIINP = float 3.5 V
SUPPLY AND LDO REGULATOR
DCIN Input Voltage Range VDCIN 8 28 V
VDCIN falling 7 7.4
DCIN Undervoltage Lockout Trip
Point
VDCIN rising 7.5 7.85
V
DCIN Quiescent Current IDCIN 8.0V < VDCIN < 28V 3.2 6 mA
VBATT = 19V, VDCIN = 0 1
BATT Input Current IBATT
VBATT = 2V to 19V, VDCIN = 19.3V 200 500
µA
LDO Output Voltage 8V < VDCIN < 28V, no load 5.25 5.4 5.55 V
LDO Load Regulation 0 < ILDO < 10mA 34 100 mV
LDO Undervoltage Lockout Trip
Point
VDCIN = 8V 3.20 4 5.15 V
REFERENCE
REF Output Voltage 0 < IREF < 500µA 4.072 4.096 4.120 V