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SN8F2270B Series
USB 2.0 Low-Speed 8-Bit Micro-Controller
SONiX TECHNOLOGY CO., LTD
Page 103
Version 1.3
11.2 FLA
SH PROGRAMMING/ERASE CONTROL REGISTER
0BAH
Bit 7
Bit 6
Bit 5
Bit 4
Bit 3
Bit 2
Bit 1
Bit 0
PECMD
PECMD7 PECMD6 PECMD5
PECMD4
PECMD3
PECMD2 PECMD1
PECMD0
Read/Write
W W W W W W W W
After
reset
0 0 0 0 0 0 0 0
Bit [7:0]
PECMD[7:0]: 0x5A: Page Program (32 words/page)
,
0xC3: Page Erase (128 words/page)
11.3 PROGRAMMING/ERASE ADDRESS REGISTER
0BBH
Bit 7
Bit 6
Bit 5
Bit 4
Bit 3
Bit 2
Bit 1
Bit 0
PEROML
PEROML7 PEROML6 PEROML5 PEROML4 PEROML3 PEROML2 PEROML1 PEROML0
Read/Write
R/W R/W R/W R/W R/W R/W R/W R/W
After
reset
0 0 0 0 0 0 0 0
Bit [7:0]
PEROML[7:0]:
Define the target starting low byte address [7:0] of Flash memory (10K x 16) which is going
to be programmed or erased.
0BCH
Bit 7
Bit 6
Bit 5
Bit 4
Bit 3
Bit 2
Bit 1
Bit 0
PEROMH
PEROMH7 PEROMH6 PEROMH5 PEROMH4 PEROMH3 PEROMH2 PEROMH1 PEROMH0
Read/Write
R/W R/W R/W R/W R/W R/W R/W R/W
After
reset
0 0 0 0 0 0 0 0
Bit [7:0]
PEROMH
[7:0]:
Define the target starting high address [15:8] of Flash memory (10K x 16) which is goin
be programmed or erased.
g to
lid
PAGE ERASE
starting addresses are
0x0, 0x80, 0x100, 0x180, 0x 200, 0x280, 0x300, 0x380 … 0x1380.
he page erase function is used to erase a page of 128 contiguous words in Flash ROM.
The va
T
Note: If the code option SECURITY0 = 0 (SECURITY1 disable), the code option address 0x13FC ~ 0x13FF will
NOT be protected by hardware. And the code option can be “erase and program” by the
in-system-programming function. To avoid the error occur, when SECUIRTY0 = 0, please DO NOT set the
PAGE ERASE starting address at 0x1380.
The valid
PAGE PROGRAM
starting addresses are
0x0, 0x20, 0x40, 0x60, 0x80, 0xA0, 0xC0, 0xE0 … 0x13E0.
The
rogram function is used to program a page of 32 contiguous words in Flash ROM.
page p