3. Built-In Options
The Si823H2, Si82520, and Si823Hx evaluation boards are populated with dual drivers with high-side/low-side (HS/LS) operation. If
VIA and VIB inputs are driven high, the devices' overlap protection will force VOA and VOB to a low state. However, both versions
of the Si823H9 EVBs are built with two single-channel drivers, which results in no overlap protection. If the customer populates the
half-bridge components, they must ensure that both inputs are never driven high at the same time. Doing so will cause both FETs to
turn on simultaneously and short circuit the bridge supply, damaging the FETs and the Si823H9 devices.
3.1 Device Swap
The six EVBs come installed with the OPNs and package types listed in the table below. These six boards cover all the package
variations of the Si823Hx/8252x products, and the ICs on each panel can easily be swapped for another of the same package type
using soldering tools. Check to ensure that pinout differences, such as EN/DIS pins and NC pins, are accounted for when powering up
the new circuit.
Table 3.1. Evaluation Board Ordering Part Numbers and Package Types
Kit Name
Device OPN
Device Package Type
Si823H2-KIT
Si823H2BD-IS3
WB SOIC-14
Si82520-KIT
Si82520BD-IS3
WB SOIC-14
Si823H9-KIT
Si823H9BD-IS4
SSO-8
Si823Hx-DFN14-KIT
Si823H1BB-IM1
DFN-14
Si823Hx-NB16-KIT
Si823H2AB-IS1
NB SOIC-16
Si823H9-NB8-KIT
Si823H9AC-IS
NB SOIC-8
3.2 Half-Bridge Gate Driver Implementation
The Si823Hx/Si8252x EVBs come from the factory configured to provide VOA, GNDA, VOB, and GNDB signals to the connector
J5. The transistors at U3/U4 and U5/U6 are missing, which allows the evaluation of the Si823Hx drivers on their own. Adding the
transistors and modifying several other components enable the customer to build a half-bridge gate driver and test its application on the
same EVB.
To configure the board for a half-bridge gate driver circuit, the following components must be removed:
• R3
• R9
• R11
Components for the following reference designators must be soldered to the board:
• R7
• U3 or U4
• U5 or U6
The positions for U3 / U4 allow the customer to place a high-side FET of either a TO-220 or D-PAK package. These two components
are wired in parallel and should not be populated at the same time. The same is true for U5 / U6 for a low-side FET.
If this half-bridge gate driver is implemented, the pinout of connector J5 will be as follows:
• Pin 1 (GND) remains connected to GNDB but now also functions as the half-bridge supply ground.
• Pin 2 (V
out
) is now the output of the half-bridge gate driver.
• Pin 3 (NC) is now disconnected from the circuit and floating.
• Pin 4 (V+) is now the half-bridge positive supply.
UG367: Si823Hx/8252x-EVB User's Guide • Built-In Options
Skyworks Solutions, Inc. • Phone [781] 376-3000 • Fax [781] 376-3100 • [email protected] • www.skyworksinc.com
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Rev. 0.3 • Skyworks Proprietary Information • Products and Product Information are Subject to Change Without Notice • August 8, 2022
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