Copyright © Siemens AG 2016. All rights reserved
476
ERTEC 200P-2 Manual
Technical data subject to change
Version
1.0
4.2 Oscillator Circuit
The oscillator on the PHY-Die (CB12 technology, see 2.3.9.2.2) has the following parame-
ters:
Parame-
ter
Description
Min
Typ
Max
Unit
C
IN
Input capacity (incl. package),
CLKP_A
4,2
pF
C
OUT
Output capacity (incl. package),
CLKP_B
3
4
5
pF
F
Frequency
25
MHz
V
IH
High Level Input Voltage
2
-
-
V
V
IL
Low Level Input Voltage
-
-
0,8
V
F
Tolerance
Frequency Tolerance over all (life-
time and temperature)
- 50
0
+ 50
ppm
The integrated oscillator is a pierce-gate oscillator.
4.2.1 Circuit with Ext. Crystal
The on-chip crystal oscillator (ASIC pins: CLKP_A, CLKP_B) of the ERTEC 200P has a
pin input capacity (incl. package) of
4.2 pF
and requires a 25 MHz crytal with following
circuit configuration:
ERTEC200P
(PHY Die – CB12)
CLKP_A
CLKP_B
1000
15 pF
15 pF
25 MHz
Hinweis:
Die Eingangskapazität des
integrierten Oszillators
TDOSAC33N32M
im
E beträgt 4.2pF
(darin enthalten ist auch der
Einfluß des Gehäuses)
The following type of ext. quartz should be used:
Epson TSX-3225 25MHz 10pF
Parame-
ter
Description
Min
F
Nominal (fundamental) Fre-
quency
25MHz
ESR
max
Maximal Equivalent Series
Resistor
40
C
L
Load Capacitance
10pF
DL
max
Maximal Drive Level
300µW
F
Tolerance
Frequency Tolerance
40ppm (@20
years)
T
Operation
Operating Temperature
-40°C to +85°C
Note that the oscillator frequency must be 25 MHz, otherwise the PLL will not operate
properly. If a different crystal is used the following conditions have to be met:
Crystal with 25MHz with a maximum of ± 50ppm over the whole lifetime and tem-
perature range.
Note:
The input capacity of the
integrated oscillator
TDOSAC33N32M
in the
ERTEC 200P is 4.2 pF (this
includes the effect of the
package)
Содержание ERTEC 200P
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