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User’s Guide
HB2637L-EVK-301
© 2022 ROHM Co., Ltd.
No. 65UG002E Rev.001
Apr. 2022
3.4 Setting the gate resistors
Gate resistors are provided to adjust the switching speed of the SiC MOSFETs and along with diodes (D13 and D14), turn on and
turn off speeds can be made different.
Turn on gate resistor: High side (R24), Low side (R26)
Turn off gate resistor: High side (R25), Low side (R27)
On this board turn on and turn off gate resistors of 10Ω are soldered. With this gate resistor value, the dv/dt does not exceed the
common mode transient immunity of the gate driver BM61S41RFV-C which is 100V/ns. Users can adjust the gate resistor value
to their wish as per the application requirements.
Additional gate-source capacitance (C27, C28) has been provided to control the di/dt of the SiC MOSFET. In this board these
capacitors are left unmounted and if a need arises user can place a capacitor that meets the application requirement. Figure 8
shows the mounted state of the gate drive circuit.
Figure 8: Top view of the board with the locations of gate resistors
3.5 Test Point Locations
A total of 10 test points has been provided on this board to monitor the important signals during the electrical characterization
process of the SiC MOSFETs. Table 1 shows the list of the test points and their purpose.
HS Gate drive circuit
LS Gate drive circuit
