Renesas HSG1001, Техническое описание

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Rev.1.00, Apr.08.2004, page 1 of 37
HSG1001
SiGeHBT
High Frequency Low Noise Amplifier
REJ03G0195-0100Z
Rev.1.00
Apr.08.2004
Features
•
High power gain and low noise figure ;
•
MSG = 22 dB typ. , NF = 0.75 dB typ. at V
CE
= 2 V, I
C
= 5 mA, f = 1.8 GHz
MSG = 21 dB typ. , NF = 0.85 dB typ. at V
CE
= 2 V, I
C
= 5 mA, f = 2.4 GHz
MSG = 15 dB typ. , NF = 1.3 dB typ. at V
CE
= 2 V, I
C
= 10 mA, f = 5.8 GHz
•
Transition Frequency
f
T
= 35 GHz typ. at f = 1 GHz
•
V
CEO
= 3.5 V
•
Ideal for 2.4 GHz / 5 GHz Band WLAN and Cordless phone applications.
Outline
1
2
3
4
1. Emitter
2. Collector
3. Emitter
4. Base
CMPAK-4
Note: Marking is "VD-".
Absolute Maximum Ratings
(Ta = 25°C)
Item Symbol Ratings Unit
Collector to base voltage V
CBO
8 V
Collector to emitter voltage V
CEO
3.5 V
Emitter to base voltage V
EBO
1.2 V
Collector current I
C
35 mA
Pc 100 mW Collector power dissipation
Pc
Note1
250 mW
Junction temperature Tj 150
°
C
Storage temperature Tstg –55 to +150 °C
Notes: 1. Value on PCB ( FR-4 : 40 x 40 x 1.6mm Double side )