Part I: PCM-049/phyCORE-OMAP44xx System on Module
phyCORE-OMAP44xx
44
©
PHYTEC Messtechnik GmbH
2012
L-760e_1
1.6.2 NAND Flash Memory (U4)
Use of Flash as non-volatile memory on the phyCORE-OMAP44xx provides an easily reprogrammable means of
code storage. The following Flash device can be used on the phyCORE-OMAP44xx:
Additionally, any parts that are footprint (VFBGA) and functionally compatible with the NAND Flash devices
listed above may also be used with the phyCORE-OMAP44xx.
The Flash device is programmable with 1.8 V. No dedicated programming voltage is required.
As of the printing of this manual NAND Flash devices generally have a life expectancy of at least 100,000 erase/
program cycles and a data retention rate of 10 years.
The NAND Flash memory is connected to the GPMC bus.
1.6.2.1 NAND Flash Lock Control (J4)
Jumper J4 controls the block lock feature of the NAND Flash (U4). Setting this jumper to position 2 + 3 enables
the block lock commands and protects or locks all blocks of the device, while position 1 + 2 or removing this
jumper will disable the block lock commands. Block lock feature can only enabled or disabled at power-on of the
NAND Flash device. The following configurations are possible:
Manufacturer
NAND Flash P/N
Density
Bus Width
Micron
MT29F1G08ABBDAH4
128 MB
8 Bit
Micron
MT29F4G08ABBDAH4
512 MB
8 Bit
Micron
MT29F8G16ADBDAH4
1 GB
16 Bit
Table 11:
Compatible NAND Flash Devices
NAND Flash lock state
J4
Block lock commands disabled
1 + 2 or not mounted
Block lock commands enabled
2 + 3
Table 12:
NAND Flash Lock Control via J4
1
1.
Defaults are in
bold blue
text
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