2004 Sep 13
19
Philips Semiconductors
Product specification
Low-power FM stereo radio for
handheld applications
TEA5768HL
V
RF
RF sensitivity input voltage
f
RF
= 76 MHz to 108 MHz;
∆
f = 22.5 kHz; f
mod
= 1 kHz;
(S+N)/N = 26 dB;
de-emphasis = 75
µ
s;
B
AF
= 300 Hz to 15 kHz
−
2
3.5
µ
V
IP3
in
in-band 3rd-order intercept
point related to V
RFI1-RFI2
(peak value)
∆
f
1
= 200 kHz;
∆
f
2
= 400 kHz;
f
tune
= 76 MHz to 108 MHz
81
84
−
dB
µ
V
IP3
out
out-band 3rd-order
intercept point related to
V
RFI1-RFI2
(peak value)
∆
f
1
= 4 MHz;
∆
f
2
= 8 Hz;
f
tune
= 76 MHz to 108 MHz
82
85
−
dB
µ
V
RF AGC
V
RF1
RF input voltage for start of
AGC
f
RF1
= 93 MHz; f
RF2
= 98 MHz;
V
RF2
= 50 dB
µ
V;
; note 2
66
72
78
dB
µ
V
IF filter
f
IF
IF filter centre frequency
215
225
235
kHz
B
IF
IF filter bandwidth
85
94
102
kHz
S
+200
HIGH side 200 kHz
selectivity
∆
f = +200 kHz;
f
tune
= 76 MHz to 108 MHz;
note 3
39
43
−
dB
S
−
200
LOW side 200 kHz
selectivity
∆
f =
−
200 kHz;
f
tune
= 76 MHz to 108 MHz;
note 3
32
36
−
dB
S
+100
HIGH side 100 kHz
selectivity
∆
f = +100 kHz;
f
tune
= 76 MHz to 108 MHz;
note 3
8
12
−
dB
S
−
100
LOW side 100 kHz
selectivity
∆
f =
−
100 kHz;
f
tune
= 76 MHz to 108 MHz;
note 3
8
12
−
dB
IR
image rejection
f
tune
= 76 MHz to 108 MHz;
V
RF
= 50 dB
µ
V
24
30
−
dB
FM IF level detector and mute voltage
V
RF
RF input voltage for start of
level ADC
read mode data byte 4 bit 4 = 1 2
3
5
µ
V
∆
V
step
level ADC step size
2
3
5
dB
P
IN
TMUTE
V
level
level output DC voltage
V
RF
= 0
µ
V
1.55
1.65
1.80
V
V
RF
= 3
µ
V
1.60
1.70
1.85
V
V
level(slope)
slope of level voltage
V
RF
= 10
µ
V to 500
µ
V
150
165
180
R
o
output resistance
280
400
520
k
Ω
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
V
TMUTE
∆
V
RF1
-----------------------
14 mV
3 dB
µ
V
--------------------
<
mV
20 dB
---------------