TDA8950_2
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 02 — 11 June 2009
12 of 39
NXP Semiconductors
TDA8950
2
×
150 W class-D power amplifier
9.
Limiting values
[1]
V
P
is the supply voltage on pins VDDP1, VDDP2 and VDDA.
10. Thermal characteristics
Fig 7.
Input configuration for mono BTL application
V
in
IN1P
OUT1
power stage
mbl466
OUT2
SGND
IN1M
IN2P
IN2M
Table 6.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Min
Max
Unit
V
P
supply voltage
Standby, Mute modes; V
DD
−
V
SS
-
90
V
I
ORM
repetitive peak output current
maximum output current limiting
9.2
-
A
T
stg
storage temperature
−
55
+150
°
C
T
amb
ambient temperature
−
40
+85
°
C
T
j
junction temperature
-
150
°
C
V
MODE
voltage on pin MODE
referenced to SGND
0
6
V
V
OSC
voltage on pin OSC
0
SGND + 6
V
V
I
input voltage
referenced to SGND; pin IN1P; IN1M;
IN2P and IN2M
−
5
+5
V
V
PROT
voltage on pin PROT
referenced to voltage on pin VSSD
0
12
V
V
ESD
electrostatic discharge voltage
Human Body Model (HBM)
−
2000
+2000
V
Charged Device Model (CDM)
−
500
+500
V
I
q(tot)
total quiescent current
Operating mode; no load; no filter; no
RC-snubber network connected
-
75
mA
V
PWM(p-p)
peak-to-peak PWM voltage
on pins OUT1 and OUT2
-
120
V
Table 7.
Thermal characteristics
Symbol
Parameter
Conditions
Typ
Unit
R
th(j-a)
thermal resistance from junction to ambient
in free air
40
K/W
R
th(j-c)
thermal resistance from junction to case
1.1
K/W
