Philips TDA8922, Техническое описание

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2003 Mar 20 25
Philips Semiconductors Objective specification
2
×
25 W class-D power amplifier TDA8922
handbook, halfpage
MGX330
α
cs
(dB)
−
80
−
100
−
60
−
20
−
40
0
fi (Hz)
10 10
2
10
3
10
4
10
5
(2)
(1)
Fig.22 Channel separation as a function of input
frequency.
2
×
8
Ω
SE; V
P
=
±
20 V.
(1) P
o
= 1 W.
(2) P
o
= 10 W.
handbook, halfpage
MGX331
α
cs
(dB)
−
80
−
100
−
60
−
20
−
40
0
fi (Hz)
10 10
2
10
3
10
4
10
5
(2)
(1)
Fig.23 Channel separation as a function of input
frequency.
2
×
4
Ω
SE; V
P
=
±
15 V.
(1) P
o
= 1 W.
(2) P
o
= 10 W.
handbook, halfpage
MGX340
G
(dB)
25
20
30
40
35
fi (Hz)
10 10
2
10
3
10
4
10
5
(1)
(2)
(3)
Fig.24 Gain as a function of input frequency.
V
i
= 100 mV; R
s
= 5.6 k
Ω
; C
i
= 330 pF.
(1) 1
×
8
Ω
BTL, V
P
=
±
15 V.
(2) 2
×
8
Ω
SE, V
P
=
±
20 V.
(3) 2
×
4
Ω
SE, V
P
=
±
15 V.
handbook, halfpage
MGX341
G
(dB)
25
20
30
40
35
fi (Hz)
10 10
2
10
3
10
4
10
5
(1)
(2)
(3)
Fig.25 Gain as a function of input frequency.
V
i
= 100 mV; R
s
= 0 k
Ω
.
(1) 1
×
8
Ω
BTL, V
P
=
±
15 V.
(2) 2
×
8
Ω
SE, V
P
=
±
20 V.
(3) 2
×
4
Ω
SE, V
P
=
±
15 V.