Philips TDA8591J, Техническое описание

Страница: 16 / 36

2002 Jan 14 16
Philips Semiconductors Preliminary specification
4
×
44 W into 4
Ω
or 4
×
75 W into 2
Ω
quad BTL car radio power amplifier
TDA8591J
12 AC CHARACTERISTICS
V
P
= V
P1
= V
P2
= V
P3
= 14.4 V; R
L
= 4
Ω
; f = 1 kHz; T
amb
= 25
o
C; measured in the circuit of Fig.29; unless otherwise
specified.
Notes
1. The noise output voltage is measured in a bandwidth of 20 Hz to 20 kHz.
2. The frequency response is fixed with external components.
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
P
o
output power THD + N = 0.5 %
R
L
= 4
Ω
20 22
−
W
R
L
= 2
Ω −
34
−
W
THD + N = 1 %; R
L
= 2
Ω −
35
−
W
THD + N = 10 %
R
L
= 4
Ω
27 28
−
W
R
L
= 2
Ω −
47
−
W
EIAJ values
R
L
= 4
Ω
41.5 44 W
R
L
= 2
Ω −
75
−
W
G
v
voltage gain V
i
= 40 mV (RMS) 25 26 27 dB
THD + N total harmonic distortion plus
noise P
o
= 1 W; f = 1 kHz
−
0.03 0.1 %
P
o
= 10 W; f = 10 kHz
−
0.2
−
%
α
cs
channel separation V
i
= 40 mV (RMS); R
s
= 0
Ω
56 68
−
dB
∆
G
v

channel unbalance
− −
1 dB
V
n(o)
noise output voltage R
s
= 0
Ω
; note 1
operating mode
−
70 110
µ
V
mute mode
−
16
− µ
V
V
o(mute)
output voltage in mute mode mute mode; V
i
= 1 V (RMS)
−
16 30
µ
V
SVRR supply voltage ripple rejection V
ripple
= 2 V (p-p); mute or
operating mode; R
s
= 0
Ω
54 68
−
dB
Z
i
input impedance V
i
≤
3 V (RMS) 60 70
−
k
Ω
CMRR common mode rejection ratio R
s
= 0
Ω
;
V
cm
= 0.35 V (RMS)
−
70
−
dB
B
P
power bandwidth THD + N = 0.5%; P
o
=
−
1 dB
with respect to 17 W
−
20 to
20000
−
Hz
f
ro(l)
low frequency roll-off at
−
1 dB; note 2
−
25
−
Hz
f
ro(h)
high frequency roll-off at
−
1 dB 150 300
−
kHz