2002 Jan 14
14
Philips Semiconductors
Preliminary specification
4
×
44 W into 4
Ω
or 4
×
75 W into 2
Ω
quad BTL car radio power amplifier
TDA8591J
9
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
R
th(j-a)
thermal resistance from junction to ambient
in free air
40
K/W
R
th(j-c)
thermal resistance from junction to case
see Fig.11
1
K/W
handbook, halfpage
2 K/W
0.5 K/W
2 K/W
2 K/W
2 K/W
virtual junction
OUT1
OUT2
OUT3
OUT4
case
MGT602
Fig.11 Equivalent thermal resistance network.
10 QUALITY SPECIFICATION
Quality according to
“SNW-FQ-611E”.
11 DC CHARACTERISTICS
T
amb
= 25
°
C; R
L
=
∞
; V
P
= V
P1
= V
P2
= V
P3
= 14.4 V; measured in the circuit of Fig.29; unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
Supplies
V
P
supply voltage
8.0
14.4
18.0
V
I
q(tot)
total quiescent current
120
200
290
mA
I
stb
standby current
−
2
50
µ
A
V
O
DC output voltage
−
7.2
−
V
V
P(mute)
low supply voltage mute
operating to mute mode
6.0
7.0
8.0
V
mute to operating mode
6.3
7.0
8.5
V
V
P(mute)(hys)
low supply voltage mute
hysteresis
−
0.4
−
V
V
OO
output offset voltage
mute mode; V
MUTE/ON
= 0 V
−
0
30
mV
operating mode; V
MUTE/ON
= 5 V
−
0
60
mV
