Philips Semiconductors Linear Products
Product specification
NE/SA/SE5512
Dual high-performance operational amplifier
August 31, 1994
80
ELECTRICAL PERFORMANCE CHARACTERISTICS
V
CC
=
±
15V, T
A
= 25
°
C over temperature range, unless otherwise specified.
SYMBOL
PARAMETER
TEST CONDITIONS
SE5512
NE/SA5512
UNIT
SYMBOL
PARAMETER
TEST CONDITIONS
Min
Typ
Max
Min
Typ
Max
UNIT
V
OS
Input offset voltage
R
S
=100
Ω
T
A
=+25
°
C
Over temp.
0.7
1
2
3
1
1.5
5
6
mV
∆
V
OS
/
∆
T
4
5
µ
V/
°
C
I
OS
Input offset current
R
S
=100k
Ω
T
A
=+25
°
C
Over temp.
3
4
10
20
6
8
20
30
nA
∆
I
OS
/
∆
T
30
40
pA/
°
C
I
BIAS
Input bias current
R
S
=100k
Ω
T
A
=+25
°
C
Over temp.
3
4
10
20
6
8
20
30
nA
∆
I
BIAS
/
∆
T
30
40
pA/
°
C
R
IN
Input resistance differential
T
A
=+25
°
C
100
100
M
Ω
V
CM
Input common mode range
T
A
=+25
°
C
Over temp.
±
13.5
±
13
±
13.7
±
13.2
±
13.5
±
13
±
13.7
±
13.2
V
CMRR
Input common-mode rejection
ratio
V
CC
=
±
15V
V
IN
=
±
13.5V
CMRR
Input common-mode rejection
ratio
T
A
=+25
°
C
70
100
70
100
dB
ratio
V
IN
=
±
13V
Over temp.
A
V
Large-signal voltage gain
R
L
=2k
Ω
T
A
=25
°
C
V
O
=
±
10V over temp.
50
25
200
50
25
200
V/mV
SR
Slew rate
T
A
=25
°
C
0.6
1
1
V/
µ
s
GBW
Small-signal unity gain band-
width
T
A
=25
°
C
3
3
MHz
θ
M
Phase margin
T
A
=25
°
C
45
45
degree
V
OUT
Output voltage swing
R
L
=2k
Ω
T
A
=25
°
C
Over temp.
±
13
±
12.5
±
13.5
±
13
±
13
±
12.5
±
13.5
±
13
V
V
OUT
Output voltage swing
R
L
=600
Ω
1
T
A
=25
°
C
Over temp.
±
10
±
7.5
±
11.5
±
9
±
10
±
8
±
11.5
±
9
V
I
CC
Power supply current
R
L
=Open
T
A
=25
°
C
Over temp.
3.4
3.6
5
5.5
3.4
3.6
5
5.5
mA
PSRR
Power supply rejection ratio
Over temp.
80
100
80
100
dB
AA
Amplifier-to-amplifier coupling
f=1kHz to 20kHz,
T
A
=25
°
C
-120
-120
dB
THD
Total harmonic distortion
f=10kHz
T
A
=25
°
C
V
O
=7V
RMS
0.01
0.01
%
V
NOISE
Input noise voltage
f=1kHz
T
A
=25
°
C
30
30
nV/
√
Hz
I
NOISE
Input noise current
f=1kHz
T
A
=25
°
C
0.2
0.2
pA/
√
Hz
I
SC
Short-circuit current
±
15V, T
A
=25
°
C
40
40
mA
NOTES:
1. Not to exceed maximum package power dissipation.
