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2000 Oct 17

2

Philips Semiconductors

Product specification

UHF amplifier module

BGY2016

FEATURES

26 V nominal supply voltage

16 W output power into a load of 50

with an RF drive

power of

20 mW.

APPLICATIONS

Base station transmitting equipment operating in the
1805 to 1990 MHz frequency band.

DESCRIPTION

The BGY2016 is a three-stage UHF amplifier module in a
SOT365A package with a plastic cap. It consists of three
NPN silicon planar transistor dies mounted together with
matching and bias circuit components on a metallized
ceramic AlN substrate.

PINNING - SOT365A

PIN

DESCRIPTION

1

RF input

2

V

S1

3

V

S2

4

RF output

Flange

ground

handbook, halfpage

MSA447

2

1

3

4

Fig.1  Simplified outline.

QUICK REFERENCE DATA
RF performance at T

mb

= 25

°

C.

LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).

MODE OF OPERATION

f

(MHz)

V

S1

(V)

V

S2

(V)

P

L

(W)

G

p

(dB)

η

(%)

Z

S

; Z

L

(

)

CW

1805 to 1990

5

26

16

28

30

50

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

V

S1

DC supply voltage

4.5

5.5

V

V

S2

DC supply voltage

28

V

P

D

input drive power

120

mW

P

L

load power

T

mb

= 25

°

C

20

W

T

stg

storage temperature

30

+100

°

C

T

mb

operating mounting base temperature

10

+90

°

C

Содержание BGY2016

Страница 1: ...DATA SHEET Product specification Supersedes data of 2000 Jan 04 2000 Oct 17 DISCRETE SEMICONDUCTORS BGY2016 UHF amplifier module handbook halfpage M3D167 ...

Страница 2: ...th matching and bias circuit components on a metallized ceramic AlN substrate PINNING SOT365A PIN DESCRIPTION 1 RF input 2 VS1 3 VS2 4 RF output Flange ground handbook halfpage MSA447 2 1 3 4 Fig 1 Simplified outline QUICK REFERENCE DATA RF performance at Tmb 25 C LIMITING VALUES In accordance with the Absolute Maximum Rating System IEC 60134 MODE OF OPERATION f MHz VS1 V VS2 V PL W Gp dB η ZS ZL ...

Страница 3: ...r gain 28 35 dB Gp in band gain variation f 1805 to 1880 MHz PL 5 W 2 dB f 1930 to 1990 MHz PL 5 W 2 dB Gp1 Gp2 gain expansion Gp1 at PL 160 mW Gp2 at PL 5 mW 1 dB η efficiency PL 16 W 30 H2 second harmonic PL 16 W 35 dBc H3 third harmonic PL 16 W 40 dBc VSWRin input VSWR 2 1 stability VSWR 2 1 through all phases PL 16 W VS2 25 to 27 V 60 dBc reverse intermodulation Pcarrier 16 W Preverse 40 dBc f...

Страница 4: ...ESCRIPTION VALUE CATALOGUE NO C1 C2 electrolytic capacitor 10 µF 35 V C3 C4 multilayer ceramic chip capacitor 10 nF 50 V C5 C6 multilayer ceramic chip capacitor 100 pF 50 V C7 C8 multilayer ceramic chip capacitor 10 pF 50 V L1 L2 Grade 4S2 Ferroxcube bead 4330 030 36300 R1 R2 metal film resistor 10 Ω 0 4 W 2322 195 13109 Z1 Z2 stripline note 1 50 Ω handbook full pagewidth MGM861 C8 C6 R2 L2 Z2 C4 ...

Страница 5: ...miconductors Product specification UHF amplifier module BGY2016 handbook full pagewidth MGM862 90 42 R2 L1 C1 C3 C2 Z1 Z2 C4 C7 C8 C6 C5 R1 L2 VS1 VS2 output input Fig 3 Printed circuit board component layout Dimensions in mm ...

Страница 6: ...ied between the mounting base and the heatsink to achieve the best possible thermal contact resistance Excessive use of thermal compound will result in an increase in thermal resistance and possible bowing of the mounting base too little will also result in poor thermal conduction The module should be mounted to the heatsink using 3 mm bolts with flat washers The bolts should first be tightened to...

Страница 7: ...EC EIAJ mm 4 0 3 8 0 56 0 46 A 9 5 9 0 0 3 0 2 D 30 1 29 9 E 18 6 18 4 12 8 12 6 4 1 3 9 40 74 40 54 2 54 e1 17 78 3 25 3 15 L 6 5 6 1 7 75 7 55 15 4 15 2 48 0 48 4 0 3 0 25 v w 0 1 y DIMENSIONS mm are the original dimensions SOT365A 0 10 20 mm scale Plastic rectangular single ended flat package flange mounted 2 mounting holes 4 in line leads SOT365A p U2 F A U1 U D q E L y Q c v A A w M bp Z 2 3 ...

Страница 8: ... device These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied Exposure to limiting values for extended periods may affect device reliability Application information Applications that are described herein for any of these products are for illustrative purposes only Philips S...

Страница 9: ...2000 Oct 17 9 Philips Semiconductors Product specification UHF amplifier module BGY2016 NOTES ...

Страница 10: ...2000 Oct 17 10 Philips Semiconductors Product specification UHF amplifier module BGY2016 NOTES ...

Страница 11: ...2000 Oct 17 11 Philips Semiconductors Product specification UHF amplifier module BGY2016 NOTES ...

Страница 12: ...A MI Tel 39 039 203 6838 Fax 39 039 203 6800 Japan Philips Bldg 13 37 Kohnan 2 chome Minato ku TOKYO 108 8507 Tel 81 3 3740 5130 Fax 81 3 3740 5057 Korea Philips House 260 199 Itaewon dong Yongsan ku SEOUL Tel 82 2 709 1412 Fax 82 2 709 1415 Malaysia No 76 Jalan Universiti 46200 PETALING JAYA SELANGOR Tel 60 3 750 5214 Fax 60 3 757 4880 Mexico 5900 Gateway East Suite 200 EL PASO TEXAS 79905 Tel 9 ...

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