Philips BGY1916, Техническое описание

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2000 Oct 17 3
Philips Semiconductors Product specification
UHF amplifier module BGY1916
CHARACTERISTICS
T
mb
= 25
°
C; V
S1
= 5 V; V
S2
= 26 V; P
L
= 16 W; Z
S
= Z
L
= 50
Ω
unless otherwise specified.
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
f frequency 1930
−
1990 MHz
I
S1
supply current
−
80
−
mA
I
S2
supply current P
D
<
−
60 dBm
−
430
−
mA
P
L
load power P
D
< 63 mW 16
− −
W
G
p
power gain 24
−
28 dB
η
efficiency 30
− −
%
H
2
second harmonic
− − −
35 dBc
H
3
third harmonic
− − −
45 dBc
VSWR
in
input VSWR
− −
1.6 : 1
stability VSWR
≤
2 : 1 through all phases;
P
L
≤
16 W; V
S2
= 25 to 27 V
− − −
60 dBc
reverse intermodulation P
carrier
= 16 W; P
reverse
=
−
40 dBc;
f
i
= f
c
±
200 kHz
− − −
53 dBc
B AM bandwidth corner frequency = 3 dB;
P
carrier
= 16 W; modulation = 20%
2
− −
MHz
ruggedness VSWR
≤
5 : 1 through all phases no degradation
Fig.2 Power gain and efficiency as functions of
load power; typical values.
f = 1960 MHz; V
S1
= 5 V; V
S2
= 26 V; Z
S
= Z
L
= 50
Ω
; T
mb
= 25
°
C.
handbook, halfpage
0
30
Gp
(dB)
Gp
η
(%)
η
20
10
0
60
40
20
0
10 20
PL (W)
30
MGD187
Fig.3 Load power as a function of input power;
typical values.
f = 1960 MHz; V
S1
= 5 V; V
S2
= 26 V; Z
S
= Z
L
= 50
Ω
; T
mb
= 25
°
C.
handbook, halfpage
0
30
PL
(W)
20
10
0
40 80
PIN (mW)
120
MGD186