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2003 Sep 19

4

Philips Semiconductors

Product specification

MMIC wideband medium power amplifier

BGA6589

CHARACTERISTICS
V

S

= 9 V;  I

S

= 84 mA; T

amb

= 25

°

C; IP3

(out)

 tone spacing = 1 MHz; P

L

= 0 dBm per tone (see Fig.2); R

bias

= 51

;

Z

L

= Z

S

= 50

Ω;

 unless otherwise specified.

SYMBOL

PARAMETER

CONDITIONS

TYP.

UNIT

|s

21

|

2

insertion power gain

f = 850 MHz

22

dB

f = 1.95 GHz

17

dB

f = 2.5 GHz

15

dB

R

L IN

return losses input

f = 850 MHz

9

dB

f = 1.95 GHz

11

dB

f = 2.5 GHz

15

dB

R

L OUT

return losses output

f = 850 MHz

10

dB

f = 1.95 GHz

13

dB

f = 2.5 GHz

13

dB

NF

noise figure

f = 850 MHz

3.0

dB

f = 1.95 GHz

3.3

dB

f = 2.5 GHz

3.4

dB

K

stability factor

f = 850 MHz

1.1

f = 2.5 GHz

1.1

P

L 1 dB

load power

at 1 dB gain compression; f = 850 MHz

21

dBm

at 1 dB gain compression; f = 1.95 GHz

20

dBm

IP3

(in)

input intercept point

f = 850 MHz

11

dBm

f = 2.5 GHz

15

dBm

IP3

(out)

output intercept point

f = 850 MHz

33

dBm

f = 2.5 GHz

30

dBm

Содержание BGA6589

Страница 1: ...DATA SHEET Product specification 2003 Sep 19 DISCRETE SEMICONDUCTORS BGA6589 MMIC wideband medium power amplifier book halfpage M3D109 ...

Страница 2: ...MD package The BGA6x89 series of medium power gain blocks are resistive feedback Darlington configured amplifiers Resistive feedback provides large bandwidth with high accuracy PINNING PIN DESCRIPTION 1 RF out bias 2 GND 3 RF in handbook halfpage MGX418 1 Bottom view 2 3 1 2 3 Fig 1 Simplified outline SOT89 and symbol Marking code 5A QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS TYP UNIT VS DC ...

Страница 3: ...TIC CHARACTERISTICS Tj 25 C VS 9 V Rbias 51 Ω unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN MAX UNIT VS DC device voltage RF input AC coupled 6 V IS DC supply current 150 mA Ptot total power dissipation Ts 70 C note 1 800 mW Tstg storage temperature 65 150 C Tj operating junction temperature 150 C PD maximum drive power 15 dBm SYMBOL PARAMETER CONDITIONS VALUE UNIT Rth j s thermal res...

Страница 4: ... f 1 95 GHz 17 dB f 2 5 GHz 15 dB RL IN return losses input f 850 MHz 9 dB f 1 95 GHz 11 dB f 2 5 GHz 15 dB RL OUT return losses output f 850 MHz 10 dB f 1 95 GHz 13 dB f 2 5 GHz 13 dB NF noise figure f 850 MHz 3 0 dB f 1 95 GHz 3 3 dB f 2 5 GHz 3 4 dB K stability factor f 850 MHz 1 1 f 2 5 GHz 1 1 PL 1 dB load power at 1 dB gain compression f 850 MHz 21 dBm at 1 dB gain compression f 1 95 GHz 20 ...

Страница 5: ...order to limit ground path induction Resistor R1 is a bias resistor providing DC current stability with temperature handbook full pagewidth 50 Ω microstrip C1 C2 C3 L1 VD VS 50 Ω microstrip C4 C5 1 R1 2 MGX419 1 2 3 Fig 2 Typical application circuit 1 Optional capacitor for optimum supply decoupling 2 R1 values at operating supply voltage VS 6 V R1 15 Ω VS 9 V R1 51 Ω VS 11 5 V R1 82 Ω Table 1 Com...

Страница 6: ...10 0 0 2 0 6 0 4 0 8 1 0 1 0 45 135 45 135 180 0 2 6 GHz 200 MHz IS 84 mA VS 9 V PD 30 dBm ZO 50 Ω Fig 3 Input reflection coefficient s11 typical values handbook full pagewidth MGX410 90 90 5 0 5 0 2 0 2 0 2 5 5 2 0 2 0 5 0 5 1 1 2 1 10 0 0 2 0 6 0 4 0 8 1 0 1 0 45 135 45 135 180 0 2 6 GHz 200 MHz Fig 4 Output reflection coefficient s22 typical values IS 84 mA VS 9 V PD 30 dBm ZO 50 Ω ...

Страница 7: ...dB 0 25 15 20 5 10 MGX412 0 1500 500 2000 2500 f MHz 1000 Fig 6 Insertion gain s21 2 as a function of frequency typical values IS 84 mA VS 9 V PD 30 dBm ZO 50 Ω handbook halfpage PL1dB dBm 0 1500 500 2000 2500 f MHz 1000 0 25 15 20 5 10 MGX413 Fig 7 Load power as a function of frequency typical values IS 84 mA VS 9 V ZO 50 Ω handbook halfpage IP3 out dBm 0 40 30 10 20 MGX414 0 1500 500 2000 2500 f...

Страница 8: ...s a function of frequency typical values IS 84 mA VS 9 V ZO 50 Ω handbook halfpage K 0 1500 500 2000 2500 f MHz 1000 0 5 3 4 1 2 MGX416 Fig 10 Stability factor as a function of frequency typical values IS 84 mA VS 9 V ZO 50 Ω handbook halfpage Is mA 40 40 20 0 60 80 Tj C 20 60 100 90 70 80 MGX417 Fig 11 Supply current as a function of operating junction temperature typical values VS 8 V Rbias 51 Ω...

Страница 9: ... 08 13 51 120 88 0 04 10 94 0 33 69 21 1 1 800 0 34 37 75 12 77 114 19 0 04 13 65 0 33 77 91 1 1 900 0 35 43 18 11 88 107 40 0 04 15 15 0 32 86 13 1 1 1000 0 35 48 9 11 22 101 34 0 04 17 89 0 32 94 01 1 1 1100 0 35 54 2 10 64 95 86 0 04 19 93 0 31 101 7 1 1 1200 0 35 59 55 10 0 90 82 0 05 22 11 0 30 109 1 1 1 1300 0 34 64 78 9 39 85 46 0 05 24 10 0 30 116 4 1 1 1400 0 34 69 93 8 93 80 15 0 05 24 6...

Страница 10: ...SSUE DATE IEC JEDEC EIAJ DIMENSIONS mm are the original dimensions SOT89 TO 243 SC 62 97 02 28 99 09 13 w M e1 e E HE B 0 2 4 mm scale b3 b2 b1 c D L A Plastic surface mounted package collector pad for good heat transfer 3 leads SOT89 1 2 3 UNIT A mm 1 6 1 4 0 48 0 35 c 0 44 0 37 D 4 6 4 4 E 2 6 2 4 HE 4 25 3 75 e 3 0 w 0 13 e1 1 5 L min 0 8 b2 b1 0 53 0 40 b3 1 8 1 4 ...

Страница 11: ...nition Limiting values given are in accordance with the Absolute Maximum Rating System IEC 60134 Stress above one or more of the limiting values may cause permanent damage to the device These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied Exposure to limiting values for ex...

Страница 12: ...ability will be accepted by the publisher for any consequence of its use Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights Philips Semiconductors a worldwide company Contact information For additional information please visit http www semiconductors philips com Fax 31 40 27 24825 For sales offices addresses send e mail to sal...

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