Zener Diodes
1
Publication date: March 2003
SKE00012CED
MAZSxxx Series
Silicon planar type
For constant voltage, constant current, waveform clip-
per and surge absorption circuit
■
Features
•
SS-Mini type 2-pin package (SSMini2-F1)
•
Low noise type
•
V
Z
rank classified(V
Z
=
2.4 V to 39 V)
■
Absolute Maximum Ratings
T
a
=
25
°
C
Unit: mm
Parameter
Symbol
Rating
Unit
Repetitive peak forward current
I
FRM
200
mA
Total power dissipation
*
P
tot
150
mW
Junction temperature
T
j
150
°
C
Storage temperature
T
stg
−
55 to
+
150
°
C
1: Anode
2: Cathode
EIAJ: SC-79
SSMini2-F1 Package
Note) *: With a printed circuit board
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Forward voltage
V
F
I
F
=
10 mA
0.9
1.0
V
Zener voltage
*2
V
Z
I
Z
Specified value
V
Reverse current
I
R
V
R
Specified value
µ
A
Zener rise operating resistance
R
ZK
I
Z
Specified value
Ω
Zener operating resistance
R
Z
I
Z
Specified value
Ω
Temperature coefficient of zener voltage
*3
S
Z
I
Z
Specified value
mV/
°
C
■
Common Electrical Characteristics
T
a
=
25
°
C
±
3
°
C
*1
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. Rated input/output frequency: 5 MHz
3. *1: The V
Z
value is for the temperature of 25
°
C. In other cases, carry out the temperature compensation.
*2: Guaranteed at 20 ms after power application.
*3: T
j
=
25
°
C to 150
°
C
0.80
+0.05
–0.03
0.60
+0.05
–0.03
0.12
+0.05
–0.02
1.20
+0.05 –0.03
0
+0
–0.05
0.30
±
0.05
0.01
±
0.01
1.60
±
0.05
0.01
±
0.01
1
2
0.80
±
0.05
(0.80)
(0.60)
(0.15)
(0.60)
5˚
5˚
Internal Connection
1
2
Marking Symbol
Refer to the list of the electrical
characteristics within part numbers
(Example) MAZS082
: 8
MAZS0820L : 8_
MAZS0820M : 8
−
MAZS0820H : 8^
Note) L/M/H marked products will be supplied
unless other wise specified
Refer to the list of the
electrical characteristics
within part numbers
