Panasonic Transistors 2SC4562G, Технические характеристики

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Transistors
1 Publication date: Ma
y
2007 SJC00366AED
This product complies with the RoHS Directive (EU 2002/95/EC).
2SC4562G
Silicon NPN epitaxial planar type
For high-frequency amplification
Complementary to 2SA1748G
■
Features
•
High transition frequency f
T
•
Small collector output capacitance (Common base, input open cir-
cuited) C
ob
•
S-Mini type package, allowing downsizing of the equipment
and automatic insertion through the tape packing
■
Absolute Maximum Ratings T
a
=
25
°
C
Parameter Symbol Rating Unit
Collector-base voltage (Emitter open) V
CBO
50 V
Collector-emitter voltage (Base open) V
CEO
50 V
Emitter-base voltage (Collector open) V
EBO
5 V
Collector current I
C
50 mA
Collector power dissipation P
C
150 mW
Junction temperature T
j
150
°
C
Storage temperature T
stg
−
55 to
+
150
°
C
Parameter Symbol Conditions Min Typ Max Unit
Collector-base voltage (Emitter open) V
CBO
I
C
=
10
µ
A, I
E
=
0 50 V
Collector-emitter voltage (Base open) V
CEO
I
C
=
1 mA, I
B
=
0 50 V
Emitter-base voltage (Collector open) V
EBO
I
E
=
10
µ
A, I
C
=
0 5 V
Collector-base cutoff current (Emitter open) I
CBO
V
CB
=
10 V, I
E
=
0 0.1
µ
A
Collector-emitter cutoff current (Base open) I
CEO
V
CE
=
10 V, I
B
=
0 100
µ
A
Forward current transfer ratio
*
h
FE
V
CE
=
10 V, I
C
=
2 mA 200 500

Collector-emitter saturation voltage V
CE(sat)
I
C
=
10 mA, I
B
=
1 mA 0.06 0.30 V
Transition frequency f
T
V
CB
=
10 V, I
E
= −
2 mA, f
=
200 MHz 250 MHz
Collector output capacitance C
ob
V
CB
=
10 V, I
E
=
0, f
=
1 MHz 1.5 pF
(Common base, input open circuited)
■
Electrical Characteristics T
a
=
25
°
C
±
3
°
C
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
Rank Q R
h
FE
200 to 400 250 to 500
■
Package
•
Code
SMini3-F2
•
Marking Symbol: AM
•
Pin Name
1: Base
2: Emitter
3: Collector