Panasonic Transistors 2SC3935, Технические характеристики

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Transistors
1
Publication date: February 2004 SJC00145CED
2SC3935
Silicon NPN epitaxial planar type
For high-frequency amplification/oscillation/mixing
■
Features
•
High transition frequency f
T
•
Small collector output capacitance (Common base, input open cir-
cuited) C
ob
and reverse transfer capacitance (Common base) C
rb
•
S-Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing
■
Absolute Maximum Ratings T
a
=
25
°
C
Parameter Symbol Rating Unit
Collector-base voltage (Emitter open) V
CBO
15 V
Collector-emitter voltage (Base open) V
CEO
10 V
Emitter-base voltage (Collector open) V
EBO
3 V
Collector current I
C
50 mA
Collector power dissipation P
C
150 mW
Junction temperature T
j
150
°
C
Storage temperature T
stg
−
55 to
+
150
°
C
Parameter Symbol Conditions Min Typ Max Unit
Collector-emitter voltage (Base open) V
CEO
I
C
=
2 mA, I
B
=
0 10 V
Emitter-base voltage (Collector open) V
EBO
I
E
=
10
µ
A, I
C
=
0 3 V
Collector-base cutoff current (Emitter open) I
CBO
V
CB
=
10 V, I
E
=
0 1
µ
A
Collector-emitter cutoff current (Base open) I
CEO
V
CE
=
10 V, I
B
=
0 10
µ
A
Forward current transfer ratio h
FE1
*1
V
CE
=
2.4 V, I
C
=
7.2 mA 75 220

h
FE2
V
CE
=
2.4 V, I
C
=
100
µ
A 75
h
FE
ratio
∆
h
FE
*2
h
FE2
: V
CE
=
2.4 V, I
C
=
100
µ
A 0.75 1.60

h
FE1
: V
CE
=
2.4 V, I
C
=
7.2 mA
Collector-emitter saturation voltage V
CE(sat)
I
C
=
20 mA, I
B
=
4 mA 0.5 V
Transition frequency f
T
V
CB
=
4 V, I
E
= −
7.2 mA, f
=
200 MHz 1.4 1.9 2.5 GHz
Collector output capacitance C
ob
V
CB
=
4 V, I
E
=
0, f
=
1 MHz 0.9 1.1 pF
(Common base, input open circuited)
Reverse transfer capacitance C
rb
V
CB
=
4 V, I
E
=
0, f
=
1 MHz 0.25 0.35 pF
(Common base)
Collector-base parameter r
bb
' • C
C
V
CB
=
4 V, I
E
= −
5 mA, f
=
31.9 MHz 11.8 13.5 ps
■
Electrical Characteristics T
a
=
25
°
C
±
3
°
C
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *1: Rank classification
Rank P Q
h
FE
75 to 130 110 to 220
2.1
±
0.1
1.3 ±
0.1
0.3
+0.1
–0.0
2.0 ±
0.2
1.25
±
0.10
(0.425)
1
3
2
(0.65) (0.65)
0.2
±
0.1
0.9
±
0.1
0 to 0.1
0.9
+0.2 –0.1
0.15
+0.10
–0.05
5˚
10˚
1: Base
2: Emitter
3: Collector
EIAJ: SC-70
SMini3-G1 Package
Marking Symbol: 1S
*2:
∆
h
FE
=
h
FE2
/ h
FE1
This product complies with the RoHS Directive (EU 2002/95/EC).