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Transistors

1

Publication date: March 2003

SJC00071BED

2SB1218A

Silicon PNP epitaxial planar type

For general amplification

Complementary to 2SD1819A

Features

High forward current transfer ratio h

FE

S-Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing and the magazine
packing.

Absolute Maximum Ratings  

T

a

 

=

 25

°

C

Parameter

Symbol

Rating

Unit

Collector-base voltage (Emitter open)

V

CBO

45

V

Collector-emitter voltage (Base open)

V

CEO

45

V

Emitter-base voltage (Collector open)

V

EBO

7

V

Collector current

I

C

100

mA

Peak collector current

I

CP

200

mA

Collector power dissipation

P

C

150

mW

Junction temperature

T

j

150

°

C

Storage temperature

T

stg

55 to

 +

150

°

C

Parameter

Symbol

Conditions

Min

Typ

Max

Unit

Collector-base voltage (Emitter open)

V

CBO

I

C

 

=

 

10 

µ

A, I

E

 

=

 0

45

V

Collector-emitter voltage (Base open)

V

CEO

I

C

 

=

 

2 mA, I

B

 

=

 0

45

V

Emitter-base voltage (Collector open)

V

EBO

I

E

 

=

 

10 

µ

A, I

C

 

=

 0

7

V

Collector-base cutoff current (Emitter open)

I

CBO

V

CB

 

=

 

20 V, I

E

 

=

 0

 0.1

µ

A

Collector-emitter cutoff current (Base open)

I

CEO

V

CE

 

=

 

10 V, I

B

 

=

 0

100

µ

A

Forward current transfer ratio 

*

h

FE

V

CE

 

=

 

10 V, I

C

 

=

 

2 mA

160

460

Collector-emitter saturation voltage

V

CE(sat)

I

C

 

=

 

100 mA, I

B

 

=

 

10 mA

 0.3

 0.5

V

Transition frequency

f

T

V

CB

 

=

 

10 V, I

E

 

=

 1 mA, f 

=

 200 MHz

80

MHz

Collector output capacitance

C

ob

V

CB

 

=

 

10 V, I

E

 

=

 0, f 

=

 1 MHz

2.7

pF

(Common base, input open circuited)

Electrical Characteristics  

T

a

 

=

 25

°

±

 3

°

C

Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.

2. *: Rank classification

Marking Symbol: B

Rank

Q

R

S

No-rank

h

FE

160 to 260

210 to 340

290 to 460

160 to 460

Marking symbol

BQ

BR

BS

B

Product of no-rank is not classified and have no marking symbol for rank.

2.1

±

0.1

1.3

±

0.1

0.3

+0.1

–0.0

2.0

±

0.2

1.25

±

0.10

(0.425)

1

3

2

(0.65) (0.65)

0.2

±

0.1

0.9

±

0.1

0 to 0.1

0.9

+0.2 –0.1

0.15

+0.10

–0.05

5

°

10

°

1: Base
2: Emitter
3: Collector

EIAJ: SC-70

SMini3-G1 Package

Unit: mm

This product complies with the RoHS Directive (EU 2002/95/EC).

Содержание Transistors 2SB1218A

Страница 1: ...ltage Collector open VEBO IE 10 µA IC 0 7 V Collector base cutoff current Emitter open ICBO VCB 20 V IE 0 0 1 µA Collector emitter cutoff current Base open ICEO VCE 10 V IB 0 100 µA Forward current transfer ratio hFE VCE 10 V IC 2 mA 160 460 Collector emitter saturation voltage VCE sat IC 100 mA IB 10 mA 0 3 0 5 V Transition frequency fT VCB 10 V IE 1 mA f 200 MHz 80 MHz Collector output capacitan...

Страница 2: ...Base current I B µA 0 2 0 1 6 0 4 1 2 0 8 0 240 200 160 120 80 40 VCE 5 V Ta 75 C 25 C 25 C Base emitter voltage VBE V Collector current I C mA 1 10 100 1000 0 001 0 01 0 1 1 10 IC IB 10 25 C 25 C Ta 75 C Collector emitter saturation voltage V CE sat V Collector current IC mA 1 10 100 1000 0 600 500 400 300 200 100 VCE 10 V Ta 75 C 25 C 25 C Forward current transfer ratio h FE Collector current IC...

Страница 3: ... 20 16 12 8 4 VCB 5 V Rg 50 kΩ Ta 25 C f 100 Hz 10 kHz 1 kHz Noise figure NF dB Emitter current IE mA 0 1 1 10 1 100 10 VCE 5 V f 270 Hz Ta 25 C hfe hoe µS hie kΩ hre 10 4 h Parameter Emitter current IE mA 1 10 100 1 100 10 IE 2 mA f 270 Hz Ta 25 C hfe hoe µS hie kΩ hre 10 4 h Parameter Collector emitter voltage VCE V This product complies with the RoHS Directive EU 2002 95 EC ...

Страница 4: ...ard applications intended 4 The products and product specifications described in this book are subject to change without notice for modification and or im provement At the final stage of your design purchasing or use of the products therefore ask for the most up to date Product Standards in advance to make sure that the latest specifications satisfy your requirements 5 When designing your equipmen...

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