Panasonic Transistors 2SA2084, Технические характеристики

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Transistors
1 Publication date: January 2003 SJC00286AED
2SA2084
Silicon PNP epitaxial planar type
For general amplification
■
Features
•
High collector-emitter voltage (Base open) V
CEO
•
Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing
■
Absolute Maximum Ratings T
a
=
25
°
C
Unit: mm
Parameter Symbol Conditions Min Typ Max Unit
Collector-emitter voltage (Base open) V
CEO
I
C
= −
100
µ
A, I
B
=
0
−
300 V
Emitter-base voltage (Collector open) V
EBO
I
E
= −
1
µ
A, , I
C
=
0
−
5 V
Forward current transfer ratio
*
h
FE
V
CE
= −
10 V, I
C
= −
5 mA 30 150

Collector-emitter saturation voltage V
CE(sat)
I
C
= −
10 mA, I
B
= −
1 mA
−
0.6 V
Collector output capacitance C
ob
V
CB
= −
10 V, I
E
=
0, f
=
1 MHz 7 pF
(Common base, input open circuited)
Transition frequency f
T
V
CB
= −
10 V, I
E
=
10 mA, f
=
200 MHz 50 MHz
Marking Symbol: 7N
0.40
+0.10
–0.05
(0.65)
1.50
+0.25 –0.05
2.8
+0.2 –0.3
2 1
3
(0.95) (0.95)
1.9
±
0.1
2.90
+0.20
–0.05
0.16
+0.10
–0.06
0.4
±
0.2
5˚
10˚
0 to 0.1
1.1
+0.2 –0.1
1.1
+0.3 –0.1
Parameter Symbol Rating Unit
Collector-base voltage (Emitter open) V
CBO
−
300 V
Collector-emitter voltage (Base open) V
CEO
−
300 V
Emitter-base voltage (Collector open) V
EBO
−
5 V
Collector current I
C
−
70 mA
Peak collector current I
CP
−
100 mA
Collector power dissipation P
C
200 mW
Junction temperature T
j
150
°
C
Storage temperature T
stg
−
55 to
+
150
°
C
1: Base
2: Emitter
3: Collector
EIAJ: SC-59
Mini3-G1 Package
■
Electrical Characteristics
T
a
=
25
°
C
±
3
°
C
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
Rank P Q
h
FE
30 to 100 60 to 150
This product complies with the RoHS Directive (EU 2002/95/EC).