Panasonic Transistors 2SA2078G, Технические характеристики

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Transistors
1 Publication date: May 2007 SJC00382AED
This product complies with the RoHS Directive (EU 2002/95/EC).
2SA2078G
Silicon PNP epitaxial planar type
For general amplification
Complementary to 2SC5846G
■
Features
•
High forward current transfer ratio h
FE
•
SSS-Mini type package, allowing downsizing of the equipment
and automatic insertion through the tape packing and the maga-
zine packing.
■
Absolute Maximum Ratings T
a
=
25
°
C
Parameter Symbol Rating Unit
Collector-base voltage (Emitter open) V
CBO
−
60 V
Collector-emitter voltage (Base open) V
CEO
−
50 V
Emitter-base voltage (Collector open) V
EBO
−
7 V
Collector current I
C
−
100 mA
Peak collector current I
CP
−
200 mA
Collector power dissipation P
C
100 mW
Junction temperature T
j
125
°
C
Storage temperature T
stg
−
55 to
+
125
°
C
Parameter Symbol Conditions Min Typ Max Unit
Collector-base voltage (Emitter open) V
CBO
I
C
= −
10
µ
A, I
E
=
0
−
60 V
Collector-emitter voltage (Base open) V
CEO
I
C
= −
100
µ
A, I
B
=
0
−
50 V
Emitter-base voltage (Collector open) V
EBO
I
E
= −
10
µ
A, I
C
=
0
−
7 V
Collector-base cutoff current (Emitter open) I
CBO
V
CB
= −
20 V, I
E
=
0
−
0.1
µ
A
Collector-emitter cutoff current (Base open) I
CEO
V
CE
= −
10 V, I
B
=
0
−
100
µ
A
Forward current transfer ratio h
FE
V
CE
= −
10 V, I
C
= −
2 mA 180 390

Collector-emitter saturation voltage V
CE(sat)
I
C
= −
100 mA, I
B
= −
10 mA
−
0.2
−
0.5 V
Transition frequency f
T
V
CB
= −
10 V, I
E
=
1 mA, f
=
200 MHz 80 MHz
Collector output capacitance C
ob
V
CB
= −
10 V, I
E
=
0, f
=
1 MHz 2.2 pF
(Common base, input open circuited)
■
Electrical Characteristics
T
a
=
25
°
C
±
3
°
C
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
■
Package
•
Code
SSSMini3-F2
•
Marking Symbol: 7H
•
Pin Name
1. Base
2. Emitter
3. Collector