background image

Transistors 

Publication date : October 2008 

SJC00415AED 

1

 

This product complies with the RoHS Directive (EU 2002/95/EC).

2SA0720

Silicon PNP epitaxial planar type

For low-frequency power ampli

cation and driver ampli

cation

Complementary to 2SC1318

 Features

 Complementary pair with 2SC1318

 

 Absolute Maximum Ratings  

T

a

 = 25

°

C

Parameter

Symbol

Rating

Unit

Collector-base voltage (Emitter open)

V

CBO

–60

V

Collector-emitter voltage (Base open)

V

CEO

–50

V

Emitter-base voltage (Collector open)

V

EBO

–5

V

Collector current

I

C

–500

mA

Peak collector current

I

CP

–1

A

Collector power dissipation

P

C

625

mW

Junction temperature

T

j

150

°

C

Storage temperature

T

stg

–55 to +150

°

C

 Electrical Characteristics  

T

a

 = 25

°

C

±

3

°

C

Parameter

Symbol

Conditions

Min

Typ

Max

Unit

Collector-base voltage (Emitter open)

V

CBO

I

C

 = –10 

m

A, I

E

 = 0

–60

V

Collector-emitter voltage (Base open)

V

CEO

I

C

 = –10 mA, I

B

 = 0

–50

V

Emitter-base voltage (Collector open)

V

EBO

I

E

 = –10 

m

A, I

C

 = 0

–5

V

Collector-base cutoff current (Emitter open)

I

CBO

V

CB

 = –20 V, I

E

 = 0 

– 0.1

m

A

Forward current transfer ratio

h

FE1

 

*

V

CE

 = –10 V, I

C

 = –150 mA

85

340

h

FE2

V

CE

 = –10 V, I

C

 = –500 mA

40

Collector-emitter saturation voltage

V

CE(sat)

I

C

 = –300 mA, I

B

 = –30 mA

– 0.35

– 0.60

V

Base-emitter saturation voltage

V

BE(sat)

I

C

 = –300 mA, I

B

 = –30 mA

–1.1

–1.5

V

Transition frequency

f

T

V

CB

 = –10 V, I

E

 = 50 mA, f = 200 MHz

200

MHz

Collector output capacitance
(Common base, input open circuited)

C

re

V

CB

 = –10 V, I

E

 = 0, f = 1 MHz

6

15

pF

Note)  1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
 

2. *: Rank classification

 

   

Rank

Q

R

S

h

FE1

85 to 170

120 to 240

170 to 340

 Package

 

Code

  TO-92B-B1

 

Pin Name

  1. Emitter
  2. Collector
  3. Base

Содержание Transistors 2SA0720

Страница 1: ...onditions Min Typ Max Unit Collector base voltage Emitter open VCBO IC 10 mA IE 0 60 V Collector emitter voltage Base open VCEO IC 10 mA IB 0 50 V Emitter base voltage Collector open VEBO IE 10 mA IC 0 5 V Collector base cutoff current Emitter open ICBO VCB 20 V IE 0 0 1 mA Forward current transfer ratio hFE1 VCE 10 V IC 150 mA 85 340 hFE2 VCE 10 V IC 500 mA 40 Collector emitter saturation voltage...

Страница 2: ...1 10 100 1000 0 01 0 1 1 10 100 IC IB 10 Ta 25 C 25 C 75 C Base emitter saturation voltage V BE sat V Collector current IC mA 0 01 0 1 1 10 0 600 500 400 300 200 100 VCE 10 V Ta 75 C 25 C 25 C Forward current transfer ratio h FE Collector current IC A 1 10 100 0 240 200 160 120 80 40 VCB 10 V Ta 25 C Transition frequency f T MHz Emitter current IE mA 1 10 100 0 50 40 30 20 10 IE 0 f 1 MHz Ta 25 C ...

Страница 3: ...EU 2002 95 EC ICEO Ta Safe operation area 0 200 160 40 120 80 1 10 102 103 104 VCE 10 V Ambient temperature Ta C I CEO T a I CEO T a 25 C 0 1 1 10 100 0 001 0 01 0 1 1 10 Single pulse Ta 25 C t 10 ms t 1 s ICP IC Collector current I C mA Collector emitter voltage VCE V ...

Страница 4: ...0 4 SJC00415AED This product complies with the RoHS Directive EU 2002 95 EC TO 92 B1 Unit mm 5 0 0 2 5 1 0 2 12 9 0 5 0 7 0 2 0 7 0 1 0 45 4 0 0 2 0 45 2 3 0 2 1 2 3 2 5 2 5 0 15 0 1 0 6 0 2 0 15 0 1 0 6 0 2 ...

Страница 5: ...han the standard applications intended 4 The products and product specifications described in this book are subject to change without notice for modification and or im provement At the final stage of your design purchasing or use of the products therefore ask for the most up to date Product Standards in advance to make sure that the latest specifications satisfy your requirements 5 When designing ...

Отзывы: