Panasonic Switching Diodes MA2Z001, Технические характеристики, Страница: 1 / 2

Switching Diodes
1
Publication date: November 2003 SKF00016BED
MA2Z001
Silicon epitaxial planar type
For switching circuits
■
Features
•
High breakdown voltage: V
R
=
200 V
•
Small terminal capacitance C
t
•
Suitable for high-density mounting
■
Absolute Maximum Ratings T
a
=
25
°
C
5˚
5˚
1.25 ±
0.1
0.7 ±
0.1
2.5
±
0.2
1.7
±
0.1
0.4
±
0.1
0 to 0.1
(0.15)
0.16
0.5 ±
0.1
1
2
+0.1
–0.06
0.35 ±
0.1
0 to 0.1
Unit: mm
1 : Anode
2 : Cathode
EIAJ : SC-76
SMini2-F1 Package
Marking Symbol: 1K
Parameter Symbol Rating Unit
Reverse voltage V
R
200 V
Repetitive peak reverse voltage V
RRM
250 V
Forward current (Average) I
F(AV)
100 mA
Repetitive peak forward current I
FRM
225 mA
Non-repetitive peak forward I
FSM
500 mA
surge current
*
Junction temperature T
j
150
°
C
Storage temperature T
stg
−
55 to
+
150
°
C
Note) *: t
=
1 s
Parameter Symbol Conditions Min Typ Max Unit
Forward voltage V
F
I
F
=
100 mA 1.2 V
Reverse current I
R
V
R
=
200 V 1.0
µ
A
Terminal capacitance C
t
V
R
=
0 V, f
=
1 MHz 3.0 pF
Reverse recovery time
*
t
rr
I
F
=
I
R
=
10 mA 60 ns
I
rr
=
1 mA , R
L
=
100
Ω
■
Electrical Characteristics
T
a
=
25
°
C
±
3
°
C
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring method for diodes.
2. Absolute frequency of input and output is 20 MHz.
3. *: t
rr
measurement circuit
Bias Application Unit N-50BU
90%
Pulse Generator
(PG-10N)
R
s
=
50
Ω
Wave Form Analyzer
(SAS-8130)
R
i
=
50
Ω
t
p
=
2
µ
s
t
r
=
0.35 ns
δ =
0.05
I
F
=
I
R
=
10 mA
R
L
=
100
Ω
10%
Input Pulse Output Pulse
I
rr
=
1 mA
t
r
t
p
t
rr
V
R
I
F
t
t
A
This product complies with the RoHS Directive (EU 2002/95/EC).