Switching Diodes
1
Publication date: November 2003
SKF00061BED
MA5J002E
Silicon epitaxial planar type
For high speed switching circuits
■
Features
•
Includes 4 elements of cathode common connection
•
Parts reduction is possible
•
Ideal for surge voltage absorption
■
Absolute Maximum Ratings
T
a
=
25
°
C
Unit: mm
Parameter
Symbol
Rating
Unit
Reverse voltage
V
R
80
V
Maximum peak reverse voltage
V
RM
80
V
Forward current
*1
I
F
100
mA
Peak forward current
*1
I
FM
225
mA
Non-repetitive peak forward
I
FSM
500
mA
surge current
*1, 2
Junction temperature
T
j
150
°
C
Operating ambient temperature
T
opr
−
25 to
+
105
°
C
Storage temperature
T
stg
−
55 to
+
150
°
C
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Forward voltage
V
F
I
F
=
100 mA
1.2
V
Reverse voltage
V
R
I
R
=
100
µ
A
80
V
Reverse current
I
R
V
R
=
75 V
100
nA
Terminal capacitance
C
t
V
R
=
0 V, f
=
1 MHz
2
pF
Reverse recovery time
*
t
rr
I
F
=
10 mA, V
R
=
6 V
3
ns
I
rr
=
0.1 I
R
, R
L
=
100
Ω
■
Electrical Characteristics
T
a
=
25
°
C
±
3
°
C
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring method for diodes.
2. Absolute frequency of input and output is 100 MHz.
3. *: t
rr
measurement circuit
Marking Symbol: M5B
Note) *1: Value in single diode used.
*2: t
=
1 s
1: Anode 1
3: Anode 2
2: Cathode 1, 2, 3, 4
4: Anode 3
5: Anode 4
SMini5-F 1 Package
Internal Connection
Bias Application Unit N-50BU
90%
Pulse Generator
(PG-10N)
R
s
=
50
Ω
Wave Form Analyzer
(SAS-8130)
R
i
=
50
Ω
t
p
=
2
µ
s
t
r
=
0.35 ns
δ =
0.05
I
F
=
10 mA
V
R
=
6 V
R
L
=
100
Ω
10%
Input Pulse
Output Pulse
I
rr
=
0.1 I
R
t
r
t
p
t
rr
V
R
I
F
t
t
A
1
4
2
3
5
(0.65) (0.65)
2.0
±
0.1
0.7
±
0.1
1.25
±
0.1
2.1
±
0.1
0.16
+0.1
–0.06
1
2
3
5
4
0.2
±
0.05
(0.425)
5˚
(0.15)
5˚
0 to 0.1
This product complies with the RoHS Directive (EU 2002/95/EC).
