Switching Diodes
1
Publication date: November 2003
SKF00033CED
Parameter
Symbol
Rating
Unit
Reverse voltage
V
R
80
V
Maximum peak reverse voltage
V
RM
80
V
Forward current
Single
I
F
100
mA
Double
150
Peak forward
Single
I
FM
225
mA
current
Double
340
Non-repetitive peak
Single
I
FSM
500
mA
forward surge current
*
Double
750
Junction temperature
T
j
150
°
C
Storage temperature
T
stg
−
55 to
+
150
°
C
MA3X152D
(MA152WA)
, MA3X152E
(MA152WK)
Silicon epitaxial planar type
For high-speed switching circuits
■
Features
•
Short reverse recovery time t
rr
•
Small terminal capacitance, C
t
■
Absolute Maximum Ratings
T
a
=
25
°
C
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Forward voltage
V
F
I
F
=
100 mA
1.2
V
Reverse voltage
V
R
I
R
=
100
µ
A
80
V
Reverse current
I
R
V
R
=
75 V
100
nA
Terminal capacitance
MA3X152D
C
t
V
R
=
0 V, f
=
1 MHz
15
pF
MA3X152E
2
Reverse recovery time
*
MA3X152D
t
rr
I
F
=
10 mA, V
R
=
6 V
10
ns
MA3X152E
I
rr
=
0.1 I
R
, R
L
=
100
Ω
3
■
Electrical Characteristics
T
a
=
25
°
C
±
3
°
C
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring method for diodes.
2. Absolute frequency of input and output is 100 MHz.
3. *: t
rr
measurement circuit
Bias Application Unit N-50BU
90%
Pulse Generator
(PG-10N)
R
s
=
50
Ω
Wave Form Analyzer
(SAS-8130)
R
i
=
50
Ω
t
p
=
2
µ
s
t
r
=
0.35 ns
δ
=
0.05
I
F
=
10 mA
V
R
=
6 V
R
L
=
100
Ω
10%
Input Pulse
Output Pulse
I
rr
=
0.1 I
R
t
r
t
p
t
rr
V
R
I
F
t
t
A
EIAJ: SC-59
Mini3-G1 Package
Marking Symbol
•
MA3X152D:
MO
•
MA3X152E:
MU
Internal Connection
D
E
MA3X152D MA3X152E
1 Cathode 1 Anode 1
2 Cathode 2 Anode 2
3 Anode1, 2 Cathode 1, 2
Unit: mm
0.40
+0.10
–0.05
(0.65)
1.50
+0.25 –0.05
2.8
+0.2 –0.3
2
1
3
(0.95) (0.95)
1.9
±
0.1
2.90
+0.20
–0.05
0.16
+0.10
–0.06
0.4
±
0.2
5˚
10˚
0 to 0.1
1.1
+0.2 –0.1
1.1
+0.3 –0.1
Note) *: t
=
1 s
Note) The part numbers in the parenthesis show conventional part number.
1
2
3
1
2
3
This product complies with the RoHS Directive (EU 2002/95/EC).
