Schottky Barrier Diodes (SBD)
1
Publication date: April 2004
SKH00044BED
MA3D752
(MA7D52)
, MA3D752A
(MA7D52A)
Silicon epitaxial planar type (cathode common)
For switching mode power supply
■
Features
•
Low forward voltage V
F
•
High dielectric breakdown voltage:
>
5 kV
•
Easy-to-mount, due to its V cut lead end
■
Absolute Maximum Ratings
T
a
=
25
°
C
Parameter
Symbol
Rating
Unit
Repetitive peak
MA3D752
V
RRM
40
V
reverse voltage
MA3D752A
45
Non-repetitive peak MA3D752
V
RSM
40
V
forward surge voltage
Forward current (Average)
I
F(AV)
20
A
Non-repetitive peak forward
I
FSM
120
A
surge current
*
Junction temperature
T
j
−
40 to
+
125
°
C
Storage temperature
T
stg
−
40 to
+
125
°
C
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Forward voltage
V
F
I
F
=
10 A, T
C
=
25
°
C
0.55
V
Reverse current
MA3D752
I
R
V
R
=
40 V, T
C
=
25
°
C
5
mA
MA3D752A
V
R
=
45 V, T
C
=
25
°
C
5
Thermal resistance (j-c)
R
th(j-c)
3.0
°C/W
■
Electrical Characteristics
T
a
=
25
°
C
±
3
°
C
Unit: mm
1.4
±
0.2
1.6
±
0.2
0.8
±
0.1
0.55
±
0.15
2.54
±
0.30
5.08
±
0.50
1
2
3
2.6
±
0.1
2.9
±
0.2
4.6
±
0.2
φ
3.2
±
0.1
3.0
±
0.5
9.9
±
0.3
15.0
±
0.5
13.7
±
0.2
4.2
±
0.2
Solder Dip
Note) *: Half sine wave; 10 ms/cycle
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body
and the leakage of current from the operating equipment.
3. Absolute frequency of input and output is 100 MHz.
Note) The part numbers in the parenthesis show conventional part number.
1: Anode
2: Cathode
(Common)
3: Anode
TO-220D-A1 Package
This product complies with the RoHS Directive (EU 2002/95/EC).
