1
Publication date: March 2004
SKL00009BED
PIN diodes
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Forward voltage
V
F
I
F
=
10 mA
1.0
V
Reverse current
I
R
V
R
=
60 V
100
nA
Terminal capacitance
C
t
V
R
=
1 V, f
=
1 MHz
0.5
pF
Forward dynamic resistance
r
f
I
F
= 10 mA, f = 100 MHz
2.0
Ω
■
Electrical Characteristics
T
a
=
25
°
C
±
3
°
C
MA2JP02
Silicon epitaxial planar type
For high frequency switch
■
Features
•
Small terminal capacitance C
t
•
Small forward dynamic resistance r
f
•
Miniature package and surface mounting type
■
Absolute Maximum Ratings
T
a
=
25
°
C
Unit: mm
Parameter
Symbol
Rating
Unit
Reverse voltage
V
R
60
V
Forward current
I
F
100
mA
Power dissipation
P
D
150
mW
Junction temperature
T
j
150
°
C
Storage temperature
T
stg
−
55 to
+
150
°
C
1: Anode
2: Cathode
EIAJ: SC-76
SMini2-F1 Package
5˚
5˚
1.25
±
0.1
0.7
±
0.1
2.5
±
0.2
1.7
±
0.1
0.4
±
0.1
0 to 0.1
(0.15)
0.16
0.5
±
0.1
1
2
+0.1
–0.06
0.35
±
0.1
0 to 0.1
Marking Symbol: 3F
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
This product complies with the RoHS Directive (EU 2002/95/EC).
