Fast Recovery Diodes (FRD)
Publication date: December 2008
SKJ00024AED
1
This product complies with the RoHS Directive (EU 2002/95/EC).
MA2DF62
Silicon Mesa type
For high frequency rectification
Features
Super high speed switching characteristic: t
rr
= 15 ns (typ.)
Low noise type
Absolute Maximum Ratings
T
a
= 25
°
C
Parameter
Symbol
Rating
Unit
Repetitive peak reverse voltage
V
RRM
600
V
Non-repetitive peak reverse surge voltage
V
RSM
600
V
Forward current (Average)
*1
I
F(AV)
10
A
Non-repetitive peak forward surge current
*2
I
FSM
40
A
Junction temperature
T
j
150
°
C
Storage temperature
T
stg
-40 to +150
°
C
Note) *1: T
C
= 25
°
C
*2: 50 Hz sine wave 1 cycle (Non-repetitive peak current)
Electrical Characteristics
T
a
= 25
°
C
±
3
°
C
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Forward voltage
V
F
I
F
= 10 A
1.8
2.5
V
Reverse current
I
RRM
V
RRM
= 600 V
30
m
A
Reverse recovery time
*
t
rr
I
F
= 0.5 A, I
R
= 1.0 A
I
rr
= 0.25 A
15
25
ns
Thermal resistance (j-c)
R
th(j-c)
3.0
°
C/W
Thermal resistance (j-a)
R
th(j-a)
63
°
C/W
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body and the leakage of
current from the operating equipment.
3. *: t
rr
measurement circuit
50
Ω
50
Ω
5.5
Ω
D.U.T.
I
F
I
R
0.25
×
I
R
t
rr
Package
Code
TO-220D-B1
Pin Name
1: Cathode
2: Anode
Marking Symbol: MA2DF62
