1
Publication date: April 2003
SKL00014AED
PIN diodes
MA27P11
Silicon epitaxial planar type
For high frequency switch
■
Features
•
Low terminal capacitance
•
Low forward dynamic resistance
•
SSS-Mini type 2-pin package
■
Absolute Maximum Ratings
T
a
=
25
°
C
Unit: mm
Parameter
Symbol
Rating
Unit
Reverse voltage
V
R
6 0
V
Forward current
I
F
5 0
mA
Junction temperature
T
j
1 5 0
°
C
Storage temperature
T
stg
−
55 to
+
150
°
C
Marking Symbol: F
1: Anode
2: Cathode
SSSMini2-F2 Package
5
°
5
°
0.27
1
2
1.40
±0.05
0.52
±0.03
1.00
±0.05
0.60
±0.05
0.15 min.
0 to 0.01
0.15 min.
0.15 max.
+0.05
–0.02
0.12
+0.05
–0.02
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Forward voltage
V
F1
I
F
=
1 mA
0.76
0.85
V
V
F2
I
F
=
10 mA
0.85
1.00
V
Reverse current
I
R
V
R
=
60 V
1.0
1 0 0
nA
Terminal capacitance
C
t
V
R
=
0 V, f
=
1 MHz
0.55
0.80
pF
Forward dynamic resistance
r
f1
I
F
=
1 mA, f
=
100 MHz
1.6
3.0
Ω
r
f2
I
F
=
10 mA, f
=
100 MHz
0.9
1.5
Ω
■
Electrical Characteristics
T
a
=
25
°
C
±
3
°
C
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
This product complies with the RoHS Directive (EU 2002/95/EC).
